DatasheetsPDF.com

HM628511HI

Hitachi Semiconductor
Part Number HM628511HI
Manufacturer Hitachi Semiconductor
Description 4M High Speed SRAM (512-kword x 8-bit)
Published Mar 26, 2005
Detailed Description HM628511HI Series 4M High Speed SRAM (512-kword × 8-bit) ADE-203-1035A (Z) Rev. 1.0 Apr. 15, 1999 Description The HM628...
Datasheet PDF File HM628511HI PDF File

HM628511HI
HM628511HI


Overview
HM628511HI Series 4M High Speed SRAM (512-kword × 8-bit) ADE-203-1035A (Z) Rev.
1.
0 Apr.
15, 1999 Description The HM628511HI Series is a 4-Mbit high speed static RAM organized 512-k word × 8-bit.
It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell)and high speed circuit designing technology.
It is most appropriate for the application which requires high speed, high density memory and wide bit width configuration, such as cache and buffer memory in system.
It is packaged in 400-mil 36-pin plastic SOJ.
Features • Single 5.
0 V supply : 5.
0 V ± 10 % • Access time 12 /15 ns (max) • Completely static memory  No clock or timing strobe required • Equal access and cycle times • Directly TTL compatible  All inputs and outputs • Operating current : 160 / 140 mA (max) • TTL standby current : 60 / 50 mA (max) • CMOS standby current : 5 mA (max) • Center VCC and VSS type pinout • Temperature range: –40 to 85°C HM628511HI Series Ordering Information Type No.
HM628511HJPI-12 HM628511HJPI-15 Access time 12 ns 15 ns Package 400-mil 36-pin plastic SOJ (CP-36D) Pin Arrangement HM628511HJPI Series A0 A1 A2 A3 A4 CS I/O1 I/O2 VCC VSS I/O3 I/O4 WE A5 A6 A7 A8 A9 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 (Top View) 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 19 NC A18 A17 A16 A15 OE I/O8 I/O7 VSS VCC I/O6 I/O5 A14 A13 A12 A11 A10 NC 2 HM628511HI Series Pin Description Pin name A0 to A18 I/O1 to I/O8 CS OE WE VCC VSS NC Function Address input Data input/output Chip select Output enable Write enable Power supply Ground No connection Block Diagram (LSB) A1 A17 A7 A11 A16 A2 A6 A5 (MSB) Internal voltage generater Row decoder Memory matrix 256 rows × 8 columns × 256 blocks × 8 bit (4,194,304 bits) VCC VSS CS I/O1 .
.
.
I/O8 Column I/O Input data control Column decoder CS WE CS A10 A8 A9 A12 A13 A14 A0 A18 A15 A3 A4 (LSB) (MSB) OE CS 3 HM628511HI Series Operation Table CS H L L L L Note: OE × H L H L ×: H or L WE...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)