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HM62W16258BI

Hitachi Semiconductor
Part Number HM62W16258BI
Manufacturer Hitachi Semiconductor
Description 4 M SRAM (256-kword x 16-bit)
Published Mar 26, 2005
Detailed Description HM62W16258BI Series 4 M SRAM (256-kword × 16-bit) ADE-203-1072A (Z) Rev. 1.0 Jun. 10, 1999 Description The Hitachi HM6...
Datasheet PDF File HM62W16258BI PDF File

HM62W16258BI
HM62W16258BI



Overview
HM62W16258BI Series 4 M SRAM (256-kword × 16-bit) ADE-203-1072A (Z) Rev.
1.
0 Jun.
10, 1999 Description The Hitachi HM62W16258BI Series is 4-Mbit static RAM organized 262,144-word × 16-bit.
HM62W16258BI Series has realized higher density, higher performance and low power consumption by employing Hi-CMOS process technology.
It offers low power standby power dissipation; therefore, it is suitable for battery backup systems.
It is packaged in standard 44-pin plastic TSOPII.
Features • • • Single 3.
3 V supply: 3.
3 V ± 0.
3 V Fast access time: 70 ns (max) Power dissipation:  Active: 9.
9 mW (typ)  Standby: 3.
3 µW (typ) Completely static memory.
 No clock or timing strobe required Equal access and cycle times Common data input and output.
 Three state output Battery backup operation.
Temperature range: –40 to 85°C • • • • • Ordering Information Type No.
HM62W16258BLTTI-7 Access time 70 ns Package 400-mil 44-pin plastic TSOPII (normal-bend type) (TTP-44DB) HM62W16258BI Series Pin Arrangement 44-pin TSOP A4 A3 A2 A1 A0 CS I/O0 I/O1 I/O2 I/O3 VCC VSS I/O4 I/O5 I/O6 I/O7 WE A17 A16 A15 A14 A13 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 (Top view) 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 A5 A6 A7 OE UB LB I/O15 I/O14 I/O13 I/O12 VSS VCC I/O11 I/O10 I/O9 I/O8 NC A8 A9 A10 A11 A12 Pin Description Pin name A0 to A17 I/O0 to I/O15 CS WE OE LB UB VCC VSS NC Function Address input Data input/output Chip select Write enable Output enable Lower byte select Upper byte select Power supply Ground No connection 2 HM62W16258BI Series Block Diagram LSB V CC V SS • • • • • A4 A3 A15 A14 A16 A1 A2 A17 A0 A13 Row decoder Memory matrix 2,048 x 2,048 MSB I/O0 Input data control I/O15 • • Column I/O Column decoder • • LSB A7 A6A5 A8 A9A10A11 A12MSB • • CS LB UB WE OE Control logic 3 HM62W16258BI Series Operation Table CS H × L L L L L L L WE × × H H H L L L H OE × × L L L × × × H UB × H L H L L H L × LB × H L L H L L H × I/O0 to I/O7 Hi...



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