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BAM80

Advanced Semiconductor
Part Number BAM80
Manufacturer Advanced Semiconductor
Description NPN SILICON RF POWER TRANSISTOR
Published Mar 26, 2005
Detailed Description BAM80 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BAM80 is Designed for VHF AM power amplifier Applications in...
Datasheet PDF File BAM80 PDF File

BAM80
BAM80

Overview
BAM80 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BAM80 is Designed for VHF AM power amplifier Applications in the range of 100 to 150 MHz.
PACKAGE STYLE .
380 4L STUD .
112x45° A FEATURES: • Common Emitter • PG = 6.
0 dB at 20 W/150 MHz • Omnigold™ Metalization System B C E ØC E B D H I J MAXIMUM RATINGS IC VCES VCEO VEBO PDISS TJ TSTG θJC 8.
5 A 60 V 35 V 4.
0 V 85 W -65 °C to +200 °C -65 °C to +200 °C 2.
0 °C/W DIM A B C D E F G H I J #8-32 UNC-2A F E G MINIMUM inches / mm MAXIMUM inches / mm .
220 / 5.
59 .
980 / 24.
89 .
370 / 9.
40 .
004 / 0.
10 .
320 / 8.
13 .
100 / 2.
54 .
450 / 11.
43 .
090 / 2.
29 .
155 / 3.
94 .
230 / 5.
84 .
385 / 9.
78 .
007 / 0.
18 .
330 / 8.
38 .
130 / 3.
30 .
490 / 12.
45 .
100 / 2.
54 .
175 / 4.
45 .
750 / 19.
05 CHARACTERISTICS SYMBOL BVCEO BVCES BVEBO ICBO ICES hFE Ccb PG ηC VSWR IC = 50 mA IC = 20 mA IE = 5.
0 mA VCB = 30 V VCE = 30 V VCE = 5.
0 V VCB = 28 V TC = 25 °C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM 35 60 4.
0 2.
0 UNITS V V V mA mA --pF dB % --- TC ...


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