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BAR15-1

Infineon Technologies AG
Part Number BAR15-1
Manufacturer Infineon Technologies AG
Description Silicon PIN Diode
Published Mar 26, 2005
Detailed Description Silicon PIN Diode • RF switch, RF attenuator for frequencies above 10 MHz • Low distortion faktor • Long-term stability ...
Datasheet PDF File BAR15-1 PDF File

BAR15-1
BAR15-1


Overview
Silicon PIN Diode • RF switch, RF attenuator for frequencies above 10 MHz • Low distortion faktor • Long-term stability of electrical characteristics • Pb-free (RoHS compliant) package • Qualified according AEC Q101 BAR1.
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/BAR61.
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BAR14-1 BAR15-1 BAR16-1 BAR61 ! , ,  ! , ,  ! , ,  "! , ,! ,  Type BAR14-1 BAR15-1 BAR16-1 BAR61 Package SOT23 SOT23 SOT23 SOT143 Configuration series common cathode common anode PI element LS(nH) 1.
8 1.
8 1.
8 2 Marking L7s L8s L9s 61s Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Diode reverse voltage Forward current Total power dissipation TS ≤ 65°C Junction temperature Operating temperature range Storage temperature VR IF Ptot Tj Top Tstg Value 100 140 250 150 -55 .
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125 -55 .
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150 Unit V mA mW °C Thermal Resistance Parameter Symbol Junction - soldering point1) RthJS 1For calculation of RthJA please refer to Application Note Thermal Resistance Value ≤ 340 Unit K/W 1 2007-04-19 BAR1.
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Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min.
typ.
max.
DC Characteristics Reverse current VR = 50 V VR = 100 V Forward voltage IF = 100 mA IR nA - - 100 - - 1000 VF - 1.
05 1.
25 V AC Characteristics Diode capacitance VR = 0 V, f = 100 MHz VR = 50 V, f = 1 MHz Zero bias conductance VR = 0 V, f = 100 MHz Forward resistance IF = 0.
01 mA, f = 100 MHz IF = 0.
1 mA, f = 100 MHz IF = 1 mA, f = 100 MHz IF = 10 mA, f = 100 MHz CT pF - 0.
2 0.
5 - 0.
25 0.
5 gP - 50 100 µS rf Ω - 2600 4200 300 470 35 55 85 5.
5 8 12 Charge carrier life time IF = 10 mA, IR = 6 mA, measured at IR = 3 mA, RL = 100 Ω I-region width τ rr WI 700 1000 - ns - 146 - µm 2 2007-04-19 BAR1.
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/BAR61.
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Diode capacitance CT = ƒ (VR) f = Parameter Forward resistance rf = ƒ (IF) f = 100MHz 1.
0 BAR 14-1.
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16-1 C T pF EHD07067 10 4 BAR 14-1.
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16-1 rf Ω 10 3 EHD07066 0.
5 10 2 f = 1 MHz f = 100 MHz 10 1 0.
0 0 10 20 30 Forward current IF = ƒ (VF) TA...



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