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BAR16-1

Siemens Semiconductor Group
Part Number BAR16-1
Manufacturer Siemens Semiconductor Group
Description Silicon PIN Diodes
Published Mar 26, 2005
Detailed Description Silicon PIN Diodes BAR 14-1 … BAR 16-1 q q q q RF switch RF attenuator for frequencies above 10 MHz Low distortion fa...
Datasheet PDF File BAR16-1 PDF File

BAR16-1
BAR16-1

Overview
Silicon PIN Diodes BAR 14-1 … BAR 16-1 q q q q RF switch RF attenuator for frequencies above 10 MHz Low distortion factor Long-term stability of electrical characteristics Type BAR 14-1 Marking L7 Ordering Code (tape and reel) Q62702-A772 Pin Configuration Package1) SOT-23 BAR 15-1 L8 Q62702-A731 BAR 16-1 L9 Q62702-A773 Maximum Ratings per Diode Parameter Reverse voltage Forward current Total power dissipation, TS ≤ 65 ˚C2) Junction temperature Storage temperature range Operating temperature range Thermal Resistance Junction - ambient 2) Junction - soldering point 1) 2) Symbol VR IF Ptot Tj Tstg Top Values 100 140 250 150 – 55 … + 150 – 55 … + 150 Unit V mA mW ˚C Rth JA Rth JS ≤ ≤ 500 340 K/W For detailed information see chapter Package Outlines.
Package mounted on alumina 15 mm × 16.
7 mm × 0.
7 mm.
Semiconductor Group 1 07.
94 BAR 14-1 … BAR 16-1 Electrical Characteristics per Diode at TA = 25 ˚C, unless otherwise specified.
Parameter Reverse current VR = 50 V VR = 100 V Forward voltage IF = 100 mA Diode capacitance VR = 50 V, f = 1 MHz VR = 0, f = 100 MHz Forward resistance f = 100 MHz, IF = 0.
01 mA IF = 0.
10 mA IF = 1 mA IF = 10 mA Zero bias conductance VR = 0, f = 100 MHz Charge carrier life time IF = 10 mA, IR = 6 mA Symbol min.
IR – – VF CT – – rf – – – – gp τL Values typ.
– – 1.
05 max.
100 1 Unit nA µA V pF – 0.
25 0.
2 2800 380 45 7 50 1 0.
5 – Ω – – – – – – µS µs – 0.
7 Semiconductor Group 2 BAR 14-1 … BAR 16-1 Forward current IF = f (VF) Forward current IF = f (TS; TA*) *Package mounted on aluminia If Forward resistance rf = f (IF) f = 100 MHz Diode capacitance CT = f (VR) Semiconductor Group 3 ...


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