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BAR64-03

Siemens Semiconductor Group
Part Number BAR64-03
Manufacturer Siemens Semiconductor Group
Description Silicon PIN Diode
Published Mar 26, 2005
Detailed Description BAR 64-03W Silicon PIN Diode l High voltage current controlled RF resistor for RF attenuator and swirches l Freqency r...
Datasheet PDF File BAR64-03 PDF File

BAR64-03
BAR64-03


Overview
BAR 64-03W Silicon PIN Diode l High voltage current controlled RF resistor for RF attenuator and swirches l Freqency range above 1 MHz l Low resistance and short carrier lifetime l For frequencies up to 3 GHz Type BAR 64-03W Marking 2 Ordering Code (tape and reel) Q62702-A1045 Pin Configuration Package 1 2 C A SOD-323 1) Maximum Ratings per Diode Parameter Reverse voltage Forward current Total Power dissipation TS ≤ 25°C Junction temperature Operating temperature range Storage temperature range Thermal Resistance Junction-ambient 1) Symbol BAR 64-03W 200 100 250 150 -55 +150°C -55.
.
.
+150°C Unit V mA mW °C °C °C VR IF Ptot Tj Top Tstg Rth JA ≤ 450 K/W _________________________ 1)Package mounted on alumina 15mm x 16.
7mm x 0.
7mm Semiconductor Group 1 Edition A01, 22.
07.
94 BAR 64-03W Electrical Characteristics at TA = 25 °C, unless otherwise specified.
Parameter Symbol min.
Value typ.
max.
Unit DC Characteristics per Diode Breakdown voltage IR = 5 µA Forward voltage IF = 50 mA Diode capacitance VR = 20 V, f = 1 MHz Forward resistance IF = 1 mA, f = 100 MHz IF = 10 mA, f = 100 MHz IF = 100 mA, f = 100 MHz Charge carrier lifetime IF = 10 mA, IR = 6 mA, IR = 3 mA Series inductance V(BR) 200 0.
23 12.
5 2.
1 0.
85 1.
55 2.
0 - V V 1.
1 pF 0.
35 Ω -20 3.
8 1.
35 µs nH - VF CT rf τL Ls Semiconductor Group 2 Edition A01, 22.
07.
94 BAR 64-03W Forward resistance rf= f (IF) f = 100 MHz Diode capacitance CT= f (VR) f = 1 MHz.
Forward current IF = f (VF) Semiconductor Group 3 Edition A01, 22.
07.
94 ...


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