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BAT120C

NXP
Part Number BAT120C
Manufacturer NXP
Description Schottky barrier double diodes
Published Mar 26, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET halfpage M3D087 BAT120 series Schottky barrier double diodes Product specification ...
Datasheet PDF File BAT120C PDF File

BAT120C
BAT120C

Overview
DISCRETE SEMICONDUCTORS DATA SHEET halfpage M3D087 BAT120 series Schottky barrier double diodes Product specification Supersedes data of 1998 Jan 21 1998 Oct 30 Philips Semiconductors Product specification Schottky barrier double diodes FEATURES • Low switching losses • Capability of absorbing very high surge current • Fast recovery time • Guard ring protected • Plastic SMD package.
APPLICATIONS • Low power switched-mode power supplies • Rectification • Polarity protection.
DESCRIPTION Planar Schottky barrier double diodes encapsulated in a SOT223 plastic SMD package 1 2 3 MSB002 - 1 BAT120 series PINNING BAT120 PIN A 1 2 3 4 k1 n.
c.
k2 a1, a2 C a1 n.
c.
a2 k1, k2 S a1 n.
c.
k2 k1, a2 Fig.
2 BAT120A diode configuration (symbol).
2 n.
c.
MGL171 4 page 1 3 age 4 page 4 1 3 2 n.
c.
MGL172 Fig.
3 Top view BAT120C diode configuration (symbol).
MARKING TYPE NUMBER BAT120A BAT120C BAT120S MARKING CODE page 4 1 2 n.
c.
3 AT120A AT120C AT120S Fig.
1 Simplified outline (SOT223) and pin configuration.
MGL173 Fig.
4 BAT120S diode configuration (symbol).
1998 Oct 30 2 Philips Semiconductors Product specification Schottky barrier double diodes LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL Per diode VR IF IFSM IRSM Tstg Tj Tamb continuous reverse voltage continuous forward current non-repetitive peak forward current non-repetitive peak reverse current storage temperature junction temperature operating ambient temperature tp < 10 ms; half sinewave; JEDEC method tp = 100 µs − − − − PARAMETER CONDITIONS BAT120 series MIN.
MAX.
UNIT 25 1 10 0.
5 +150 125 +125 V A A A °C °C °C −65 − −65 ELECTRICAL CHARACTERISTICS Tamb = 25 °C unless otherwise specified.
SYMBOL Per diode VF forward voltage see Fig.
5 IF = 100 mA IF = 1 A IR reverse current VR = 20 V; note 1; see Fig.
6 VR = 25 V; note 1; see Fig.
6 VR = 20 V; Tj = 100 °C; note 1 Cd Note 1.
Pulse test: tp = 300 µs; δ = 0.
02.
THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1.
Re...


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