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BAT15-110R

Siemens Semiconductor Group
Part Number BAT15-110R
Manufacturer Siemens Semiconductor Group
Description Silicon Schottky Diodes (Beam lead technology Low dimension High performance Low barrier)
Published Mar 26, 2005
Detailed Description Silicon Schottky Diodes q q q q BAT 15- … R Beam lead technology Low dimension High performance Low barrier ESD: Elec...
Datasheet PDF File BAT15-110R PDF File

BAT15-110R
BAT15-110R

Overview
Silicon Schottky Diodes q q q q BAT 15- … R Beam lead technology Low dimension High performance Low barrier ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BAT 15-020 R BAT 15-050 R BAT 15-090 R BAT 15-110 R Marking – Ordering Code Q62702-D1264 Q62702-D1272 Q62702-D1281 Q62702-D1290 Pin Configuration Package1) R Maximum Ratings Parameter Symbol Values BAT 15-020 R BAT 15-050 R Forward current Junction temperature Storage temperature range Operating temperature range IF Tj Tstg Top 100 175 – 65 … + 150 – 65 … + 150 BAT 15-090 R BAT 15-110 R 50 mA ˚C Unit 1) For detailed information see chapter Package Outlines.
BAT 1515- … .
.
.
R BAT Electrical Characteristics at TA = 25 ˚C, unless otherwise specified.
Parameter Symbol min.
DC Characteristics Diode capacitance VR = 0, f = 1 MHz CT BAT 15-020 R BAT 15-050 R BAT 15-090 R BAT 15-110 R VF BAT 15-020 R BAT 15-050 R BAT 15-090 R BAT 15-110 R BAT 15-020 R BAT 15-050 R BAT 15-090 R BAT 15-110 R FSSB – – – – rf BAT 15-020 R BAT 15-050 R BAT 15-090 R BAT 15-110 R – – – – 3.
5 4.
0 7.
0 10.
0 – – – – 6.
0 6.
5 6.
5 7.
0 – – – – Ω – – – – – – – – 0.
26 0.
28 0.
30 0.
31 0.
35 0.
39 0.
44 0.
45 – – – – – – – – dB – – – – 0.
30 0.
20 0.
14 0.
10 0.
35 0.
25 0.
15 0.
12 V pF Values typ.
max.
Unit Forward voltage IF = 1 mA IF = 10 mA Single sideband noise figure FIF = 1.
5 dB, PLO = 0 dBm, fIF = 10.
7 MHz f = 3.
0 GHz BAT 15-020 R f = 6.
0 GHz BAT 15-050 R f = 9.
3 GHz BAT 15-090 R f = 16 GHz BAT 15-110 R Differential forward resistance IF = 10 mA IF = 50 mA ...


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