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BAT17-04

Siemens Semiconductor Group
Part Number BAT17-04
Manufacturer Siemens Semiconductor Group
Description Silicon Schottky Diode (For mixer applications in the VHF/UHF range For high-speed switching)
Published Mar 26, 2005
Detailed Description Silicon Schottky Diode q q BAT 17… For mixer applications in the VHF/UHF range For high-speed switching Type Orderin...
Datasheet PDF File BAT17-04 PDF File

BAT17-04
BAT17-04

Overview
Silicon Schottky Diode q q BAT 17… For mixer applications in the VHF/UHF range For high-speed switching Type Ordering Code (tape and reel) Q62702-A504 Q62702-A775 Q62702-A776 Q62702-A777 Pin Configuration Marking 1 2 3 A A A C – C A C C C/A C/C A/A 53 54 55 56 Package BAT 17 BAT 17-04 BAT 17-05 BAT 17-06 SOT-23 Maximum Ratings Parameter Reverse voltage Forward current Total power dissipation TS ≤ 60 °C Junction temperature Operating temperature range Storage temperature range Thermal Resistance Junction-ambient1) Junction-soldering point Symbol Values 4 130 150 150 – 55 … + 150 – 55 … + 150 Unit V mA mW °C °C °C VR IF Ptot Tj Top Tstg Rth JA Rth JS ≤ 750 ≤ 590 K/W K/W 1) Package mounted on an epoxy pcb 40 mm x 40 mm x 1.
5 mm/1cm2 Cu.
Semiconductor Group 1 03.
96 BAT 17… Electrical Characteristics at TA = 25 °C, unless otherwise specified.
Parameter Symbol min.
DC Characteristics Breakdown voltage IR = 10 µA Reverse current VR = 3 V VR = 3 V, TA = 60 °C VR = 4 V Forward voltage IF = 0.
1 mA IF = 1 mA IF = 10 mA Diode capacitance VR = 0 V f = 1 MHz Differential forward resistance IF = 5 mA, f = 10 kHz Value typ.
max.
Unit V(BR) 4 – – – – 275 340 425 0.
55 8 – V µA – – – 0.
25 1.
25 10 mV 200 250 350 350 450 600 pF 0.
4 0.
75 Ω – 15 IR VF CT rS Semiconductor Group 2 BAT 17… Forward current IF = f (VF) Reverse current IR = f (VR) Diode capacitance CT = f (VR) f = 1 MHz Differential forward resistance RF = f (IF) f = 10 kHz Semiconductor Group 3 BAT 17… Forward current IF = f (TA; TS*) *Package mounted on aluminum Semiconductor Group 4 ...


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