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BAT41

STMicroelectronics
Part Number BAT41
Manufacturer STMicroelectronics
Description Low capacitance small signal Schottky diodes
Published Mar 26, 2005
Detailed Description BAT41 Datasheet Low capacitance small signal Schottky diodes K A A K SOD-523 A K SOD123 Features • Low leakage curr...
Datasheet PDF File BAT41 PDF File

BAT41
BAT41

Overview
BAT41 Datasheet Low capacitance small signal Schottky diodes K A A K SOD-523 A K SOD123 Features • Low leakage current losses • Negligible switching losses • Low forward and reverse recovery times • Extremely fast switching • Surface mount device • Low capacitance diode • ECOPACK2 compliant Applications • General Rectification • Reverse polarity protection • Voltage clamping • High-speed switching Description The BAT41 series uses 100 V Schottky barrier diodes packaged in SOD-123 or SOD-523.
This series is specially suited for switching mode with low IR losses.
Product status link BAT41 Product summary IF 200 mA VRRM 100 V Tj (max.
) 150 °C C (typ.
) 3 pF DS4884 - Rev 3 - September 2021 For further information contact your local STMicroelectronics sales office.
www.
st.
com BAT41 Characteristics 1 Characteristics Table 1.
Absolute ratings (limiting values at 25 °C, unless otherwise specified) Symbol VRRM IF IFSM Tstg Tj Parameter Repetitive peak reverse voltage Continuous forward current Surge non repetitive forward current tp = 10 ms sinusoidal Storage temperature range Maximum operating junction temperature Value Unit 100 V 200 mA 1 A -65 to +150 °C +150 °C Table 2.
Thermal resistance parameter Symbol Parameter Rth(j-a) Junction to ambient(1) 1.
Epoxy printed circuit board with recommended pad layout SOD-123 SOD-523 For more information, please refer to the following application note: • AN5088: Rectifiers thermal management, handling and mounting recommendations Typ.
value Unit 500 °C/W 600 Table 3.
Static electrical characteristics Symbol IR(1) Parameter Reverse leakage current VF(2) Forward voltage drop 1.
Pulse test: tp = 5 ms, δ < 2% 2.
Pulse test: tp = 380 µs, δ < 2% Test conditions Tj = 25 °C Tj = 100 °C VR = 50 V Tj = 25 °C IF = 1 mA IF = 200 mA Min.
Typ.
Max.
Unit - 0.
1 µA - 20 - 400 450 mV - 1000 Symbol C Table 4.
Dynamic characteristics Parameter Diode capacitance Test conditions VR = 1 ...


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