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BAT43

General Semiconductor
Part Number BAT43
Manufacturer General Semiconductor
Description Schottky Diodes
Published Mar 26, 2005
Detailed Description BAT42, BAT43 Schottky Diodes DO-35 min. 1.083 (27.5) FEATURES ♦ For general purpose applications ♦ These diodes feature...
Datasheet PDF File BAT43 PDF File

BAT43
BAT43


Overview
BAT42, BAT43 Schottky Diodes DO-35 min.
1.
083 (27.
5) FEATURES ♦ For general purpose applications ♦ These diodes feature very low turnmax.
∅.
079 (2.
0) max.
.
150 (3.
8) on voltage and fast switching.
These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges.
case with the type designations BAT42W to BAT43W and in the MiniMELF case with type designations LL42 to LL43.
Cathode Mark min.
1.
083 (27.
5) ♦ These diodes are also available in the SOD-123 max.
∅.
020 (0.
52) MECHANICAL DATA Dimensions in inches and (millimeters) Case: DO-35 Glass Case Weight: approx.
0.
13 g MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Repetitive Peak Reverse Voltage Forward Continuous Current at Tamb = 25 °C Repetitive Peak Forward Current at tp < 1 s, δ < 0.
5, Tamb = 25 °C Surge Forward Current at tp < 10 ms, Tamb = 25 °C Power Dissipation1) at Tamb = 65 °C Junction Temperature Ambient Operating Temperature Range Storage Temperature Range 1) Value 30 2001) 5001) 41) 2001) 125 –65 to +125 –65 to +150 Unit V mA mA A mW °C °C °C V RRM IF IFRM IFSM Ptot Tj Tamb TS Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature 4/98 BAT42, BAT43 ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Reverse Breakdown Voltage tested with 100 µA Pulses Forward Voltage Pulse Test tp < 300 µs, δ < 2% at IF = 200 mA at IF = 10 mA at IF = 50 mA at IF = 2 mA at IF = 15mA Leakage Current Pulse Test tp < 300 µs, δ < 2% at VR = 25 V at VR = 25 V, Tj = 100 °C Capacitance at VR = 1 V, f = 1 MHz Reverse Recovery Time from IF = 10 mA through IR = 10 mA to IR = 1 mA, RL = 100 Ω Detection Efficiency at RL = 15 KΩ, CL = 300 pF, f = 45 MHz, VRF = 2 V Thermal Resistance Junction to Ambient Air 1) Min.
30 Typ.
– Max.
– Unit V V(BR)R BAT42 BAT42 BAT43 BAT43 VF VF VF VF VF – – – 0.
26 – – – – – – 1 0.
...


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