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BAT62-07

Siemens Semiconductor Group
Part Number BAT62-07
Manufacturer Siemens Semiconductor Group
Description Silicon Schottky Diode
Published Mar 26, 2005
Detailed Description BAT 62-07W Silicon Schottky Diode • Low barrier diode for detectors up to GHz frequencies 3 4 2 1 VPS05605 ESD: Elect...
Datasheet PDF File BAT62-07 PDF File

BAT62-07
BAT62-07

Overview
BAT 62-07W Silicon Schottky Diode • Low barrier diode for detectors up to GHz frequencies 3 4 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution Type BAT 62-07W Marking Ordering Code 62s Q62702-A1198 Pin Configuration 1=C1 2=C2 3=A2 4=A1 Package SOT-343 Maximum Ratings Parameter Diode reverse voltage Forward current Total power dissipation, T S = 103 °C Junction temperature Storage temperature Thermal Resistance Junction - ambient 1) Symbol Value 40 20 100 150 -55 .
.
.
+150 Unit V mA mW °C VR IF Ptot Tj Tstg RthJA RthJS ≤ 630 ≤ 470 K/W Junction - soldering point Semiconductor Group Semiconductor Group 11 Sep-07-1998 1998-11-01 BAT 62-07W Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter Symbol Values min.
DC characteristics Reverse current typ.
0.
58 max.
10 1 Unit IR VF - µA V VR = 40 V Forward voltage I F = 2 mA AC characteristics Diode capacitance CT CC R0 Ls - 0.
35 0.
1 225 2 0.
6 - pF VR = 0 V, f = 1 MHz Case capacitance f = 1 MHz Differential resistance kΩ nH VR = 0 , f = 10 kHz Series inductance chip to ground Semiconductor Group Semiconductor Group 22 Sep-07-1998 1998-11-01 BAT 62-07W Forward current IF = f (TA*;TS) * mounted on alumina Forward current IF = f (VF ) TA = parameter 10 4 25 uA mA TA IF 15 TS 10 3 T A = 25°C T A = 85°C T A = 125°C T A = -40°C 10 10 2 5 IF 120 °C 10 1 0.
0 0 0 20 40 60 80 100 150 0.
2 0.
4 0.
6 0.
8 1.
0 1.
2 1.
4 1.
6 V 1.
9 TA,TS VF Permissible Pulse Load Permissiple pulse load IFmax/IFDC = f(tp) I Fmax / I FDC = f(tp) 10 3 10 1 K/W IFmax / IFDC 10 2 - 0.
5 0.
2 0.
1 0.
05 0.
02 0.
01 0.
005 D=0 D=0 0.
005 0.
01 0.
02 0.
05 0.
1 0.
2 0.
5 RthJS 10 1 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp Semiconductor Group Semiconductor Group 33 Sep-07-1998 1998-11-01 BAT 62-07W Diode capacitance CT = f (V R) f = 1MHz Reverse current IR = f...


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