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BAV116W

Diodes Incorporated
Part Number BAV116W
Manufacturer Diodes Incorporated
Description SURFACE MOUNT LOW LEAKAGE DIODE
Published Mar 26, 2005
Detailed Description BAV116W SURFACE MOUNT LOW LEAKAGE DIODE Features • Surface Mount Package Ideally Suited for Automated Insertion • Very ...
Datasheet PDF File BAV116W PDF File

BAV116W
BAV116W

Overview
BAV116W SURFACE MOUNT LOW LEAKAGE DIODE Features • Surface Mount Package Ideally Suited for Automated Insertion • Very Low Leakage Current • Lead, Halogen and Antimony Free, RoHS Compliant "Green" Device (Notes 3 and 4) Mechanical Data • Case: SOD-123 • Case Material: Molded Plastic.
UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020D • Terminals: Solderable per MIL-STD-202, Method 208 • Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe) • Polarity: Cathode Band • Marking Information: See Page 2 • Ordering Information: See Page 2 • Weight: 0.
01 grams (approximate) SOD-123 TOP VIEW Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Forward Continuous Current Repetitive Peak Forward Current Non-Repetitive Peak Forward Surge Current @ t = 1.
0μs @ t = 1.
0ms @ t = 1.
0s Symbol VRRM VRWM VR VR(RMS) IFM IFRM IFSM Value 130 90 215 500 4.
0 1.
0 0.
5 Unit V V mA mA A Thermal Characteristics Characteristic Power Dissipation (Note 2) Thermal Resistance Junction to Ambient Air (Note 2) Operating and Storage Temperature Range Symbol PD RθJA TJ, TSTG Value 250 500 -65 to +150 Unit mW °C/W °C Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Reverse Breakdown Voltage (Note 1) Forward Voltage Leakage Current (Note 1) Total Capacitance Reverse Recovery Time Symbol Min Typ Max Unit Test Condition V(BR)R 130 130 ⎯ ⎯ ⎯ ⎯ V IR = 100μA IR = 100μA, TJ =125°C 0.
90 IF = 1.
0mA, TJ = 25°C 1.
0 IF = 10mA, TJ = 25°C VF ⎯ ⎯ 1.
1 V IF = 50mA, TJ = 25°C 1.
25 1.
0 IF = 150mA, TJ = 25°C IF = 10mA, TJ = 125°C IR ⎯ ⎯ 5.
0 80 nA VR = 75V, TJ = 25°C nA VR = 75V, TJ = 125°C CT ⎯ 2.
4 5 pF VR = 0, f = 1.
0MHz trr ⎯ ⎯ 3.
0 μs IF = IR = 10mA, Irr = 0.
1 x IR, RL = 100Ω Notes: 1.
Short duration pulse test used to minimize self-heating effect.
2.
Part mounted on FR-4 board w...


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