DatasheetsPDF.com

BAV170

NXP
Part Number BAV170
Manufacturer NXP
Description Low-leakage double diode
Published Mar 26, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BAV170 Low-leakage double diode Product data sheet Supersedes ...
Datasheet PDF File BAV170 PDF File

BAV170
BAV170

Overview
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BAV170 Low-leakage double diode Product data sheet Supersedes data of 1999 May 11 2003 Mar 25 NXP Semiconductors Low-leakage double diode Product data sheet BAV170 FEATURES • Plastic SMD package • Low leakage current: typ.
3 pA • Switching time: typ.
0.
8 µs • Continuous reverse voltage: max.
75 V • Repetitive peak reverse voltage: max.
85 V • Repetitive peak forward current: max.
500 mA.
DESCRIPTION Epitaxial, medium-speed switching, double diode in a small SOT23 plastic SMD package.
The diodes are in common cathode configuration.
PINNING PIN 1 2 3 DESCRIPTION anode anode common cathode APPLICATION • Low-leakage current applications in surface mounted circuits.
MARKING TYPE NUMBER BAV170 MARKING CODE(1) JX* Note 1.
∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
∗ = W : Made in China.
handbook, 4 columns 2 1 Top view 3 21 3 MAM108 Fig.
1 Simplified outline (SOT23) and symbol.
2003 Mar 25 2 NXP Semiconductors Low-leakage double diode Product data sheet BAV170 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS Per diode VRRM VR IF IFRM IFSM Ptot Tstg Tj repetitive peak reverse voltage continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current total power dissipation storage temperature junction temperature single diode loaded; note 1; see Fig.
2 double diode loaded; note 1; see Fig.
2 square wave; Tj = 25 °C prior to surge; see Fig.
4 tp = 1 µs tp = 1 ms tp = 1 s Tamb = 25 °C; note 1 Note 1.
Device mounted on a FR4 printed-circuit board.
MIN.
MAX.
UNIT − 85 V − 75 V − 215 mA − 125 mA − 500 mA − 4A − 1A − 0.
5 A − 250 mW −65 +150 °C − 150 °C ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified.
SYMBOL PARAMETER Per diode VF forward voltage IR reverse current Cd diode capacitance trr reverse recovery time CONDITIONS TYP.
MAX.
UNIT see Fig.
3...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)