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BAV170

Infineon Technologies AG
Part Number BAV170
Manufacturer Infineon Technologies AG
Description Silicon Low Leakage Diode Array
Published Mar 26, 2005
Detailed Description Silicon Low Leakage Diode Array • Low-leakage applications • Medium speed switching times • Pb-free (RoHS compliant) pac...
Datasheet PDF File BAV170 PDF File

BAV170
BAV170

Overview
Silicon Low Leakage Diode Array • Low-leakage applications • Medium speed switching times • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 BAV170.
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BAV170 ! , ,  Type BAV170 Package SOT23 Configuration common cathode Marking JXs Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Diode reverse voltage Peak reverse voltage Forward current Non-repetitive peak surge forward current t = 1 µs VR VRM IF IFSM t=1s Total power dissipation TS ≤ 35°C Junction temperature Storage temperature Ptot Tj Tstg Value 80 85 200 4.
5 0.
5 250 150 -65 .
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150 Unit V mA A mW °C Thermal Resistance Parameter Junction - soldering point2) BAV170 Symbol RthJS Value ≤ 460 Unit K/W 1Pb-containing package may be available upon special request 2For calculation of RthJA please refer to Application Note Thermal Resistance 1 2007-04-19 BAV170.
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Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Value...


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