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BAV199

NXP
Part Number BAV199
Manufacturer NXP
Description Low-leakage double diode
Published Mar 26, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BAV199 Low-leakage double diode Product data sheet Supersedes ...
Datasheet PDF File BAV199 PDF File

BAV199
BAV199

Overview
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BAV199 Low-leakage double diode Product data sheet Supersedes data of 1999 May 11 2001 Oct 12 NXP Semiconductors Low-leakage double diode Product data sheet BAV199 FEATURES • Plastic SMD package • Low leakage current: typ.
3 pA • Switching time: typ.
0.
8 µs • Continuous reverse voltage: max.
75 V • Repetitive peak reverse voltage: max.
85 V • Repetitive peak forward current: max.
500 mA.
MARKING TYPE NUMBER BAV199 MARKING CODE(1) JY∗ Note 1.
∗ = p: Made in Hong Kong.
∗ = t: Made in Malaysia.
∗ = W: Made in China.
PINNING PIN DESCRIPTION 1 anode 2 cathode 3 anode; cathode APPLICATION • Low-leakage current applications in surface mounted circuits.
DESCRIPTION Epitaxial, medium-speed switching, double diode in a small SOT23 plastic SMD package.
The diodes are connected in series.
handbook, 4 columns 2 1 Top view 3 21 3 MAM107 Fig.
1 Simplified outline (SOT23) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN.
Per diode VRRM VR IF repetitive peak reverse voltage continuous reverse voltage continuous forward current IFRM repetitive peak forward current IFSM non-repetitive peak forward current Ptot total power dissipation Tstg storage temperature Tj junction temperature single diode loaded; note 1; see Fig.
2 double diode loaded; note 1; see Fig.
2 square wave; Tj = 25 °C prior to surge; see Fig.
4 tp = 1 µs tp = 1 ms tp = 1 s Tamb = 25 °C; note 1 − − − − − − − − − −65 − Note 1.
Device mounted on a FR4 printed-circuit board.
MAX.
85 75 160 140 500 4 1 0.
5 250 +150 150 UNIT V V mA mA mA A A A mW °C °C 2001 Oct 12 2 NXP Semiconductors Low-leakage double diode Product data sheet BAV199 ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified.
SYMBOL PARAMETER Per diode VF forward voltage IR reverse current Cd diode capacitance trr reverse recovery time CONDITIONS see Fig.
3 IF = 1 mA IF = 10 mA I...


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