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BAV199

Infineon Technologies AG
Part Number BAV199
Manufacturer Infineon Technologies AG
Description Silicon Low Leakage Diode
Published Mar 26, 2005
Detailed Description Silicon Low Leakage Diode • Low-leakage applications • Medium speed switching times • Series pair configuration • Pb-fre...
Datasheet PDF File BAV199 PDF File

BAV199
BAV199

Overview
Silicon Low Leakage Diode • Low-leakage applications • Medium speed switching times • Series pair configuration • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 BAV199.
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BAV199 ! , ,  Type BAV199 Package SOT23 Configuration series Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Diode reverse voltage Peak reverse voltage Forward current Non-repetitive peak surge forward current t = 1 µs t=1s VR VRM IF IFSM Total power dissipation BAV199, TS ≤ 31°C Junction temperature Storage temperature Ptot Tj Tstg Thermal Resistance Parameter Junction - soldering point2) BAV199 Symbol RthJS 1Pb-containing package may be available upon special request 2For calculation of RthJA please refer to Application Note Thermal Resistance Marking JYs Value 80 85 200 4.
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5 330 Unit V mA A mW 150 -65 .
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150 °C Value ≤ 360 Unit K/W 1 2007-04-19 BAV199.
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Electrical Characteristics at TA = 25°C, unless otherwise specified ...


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