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BAV20

NXP
Part Number BAV20
Manufacturer NXP
Description General purpose diodes
Published Mar 26, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BAV20; BAV21 General purpose diodes Product data sheet Supersedes data of 19...
Datasheet PDF File BAV20 PDF File

BAV20
BAV20

Overview
DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BAV20; BAV21 General purpose diodes Product data sheet Supersedes data of 1996 Sep 17 1999 May 25 NXP Semiconductors General purpose diodes Product data sheet BAV20; BAV21 FEATURES • Hermetically sealed leaded glass SOD27 (DO-35) package • Switching speed: max.
50 ns • General application • Continuous reverse voltage: max.
150 V, 200 V • Repetitive peak reverse voltage: max.
200 V, 250 V • Repetitive peak forward current: max.
625 mA.
DESCRIPTION The BAV20 and BAV21 are switching diodes fabricated in planar technology, and encapsulated in hermetically sealed leaded glass SOD27 (DO-35) packages.
handbook, halfpagke a MAM246 APPLICATIONS • General purposes in industrial equipment e.
g.
oscilloscopes, digital voltmeters and video output stages in colour television.
The diodes are type branded.
Fig.
1 Simplified outline (SOD27; DO-35) and symbol.
1999 May 25 2 NXP Semiconductors General purpose diodes Product data sheet BAV20; BAV21 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER VRRM repetitive peak reverse voltage BAV20 BAV21 VR continuous peak reverse voltage BAV20 BAV21 IF continuous forward current IFRM repetitive peak forward current IFSM non-repetitive peak forward current Ptot total power dissipation Tstg storage temperature Tj junction temperature CONDITIONS see Fig.
2; note 1 square wave; Tj = 25 °C prior to surge; see Fig.
4 t = 1 μs t = 100 μs t=1s Tamb = 25 °C; note 1 Note 1.
Device mounted on an FR4 printed circuit-board; lead length 10 mm.
MIN.
MAX.
UNIT − 200 V − 250 V − 150 V − 200 V − 250 mA − 625 mA −9A −3A −1A − 400 mW −65 +175 °C − 175 °C 1999 May 25 3 NXP Semiconductors General purpose diodes Product data sheet BAV20; BAV21 ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified.
SYMBOL PARAMETER VF forward voltage IR reverse current Cd diode capacitance trr reverse recovery time CONDITIONS MIN.
see Fig.
3 IF ...


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