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AM42-0039

Tyco Electronics
Part Number AM42-0039
Manufacturer Tyco Electronics
Description GaAs MMIC VSAT Power Amplifier/ 2W 6.40 - 7.025 GHz
Published Mar 26, 2005
Detailed Description GaAs MMIC VSAT Power Amplifier, 2W, 6.40-7.025 GHz AM42-0039 AM42-0039 GaAs MMIC VSAT Power Amplifier, 2W 6.40 - 7.02...
Datasheet PDF File AM42-0039 PDF File

AM42-0039
AM42-0039

Overview
GaAs MMIC VSAT Power Amplifier, 2W, 6.
40-7.
025 GHz AM42-0039 AM42-0039 GaAs MMIC VSAT Power Amplifier, 2W 6.
40 - 7.
025 GHz Features • • • • • High Linear Gain: 30 dB Typ.
High Saturated Output Power: +33 dBm Typ.
High Power Added Efficiency: 22% Typ.
50Ω Input/Output Broadband Matched High Performance Ceramic Bolt Down Package CR-15 Description M/A-COM’s AM42-0039 is a three-stage MMIC power amplifier in a ceramic bolt down style hermetic package.
The AM42-0039 employs a fully matched monolithic chip with internally decoupled Gate and Drain bias networks.
The AM42-0039 is designed to be operated from a constant current Drain supply.
By varying the Gate bias voltage, the saturated output power performance of this device can be tailored for various applications.
The AM42-0039 is designed for use as an output stage or driver amplifier for VSAT transmitter systems.
This amplifier is monolithic and requires a minimum of external components.
M/A-COM’s AM42-0039 is fabricated using a mature 0.
5 micron GaAs MESFET process.
The chip is fully passivated for increased performance and reliability.
These amplifiers are 100% RF tested to ensure compliance to performance specifications.
Notes: (unless otherwise specified) 1.
Dimensions are in inches.
2.
Tolerance: .
XXX = ± 0.
005 .
XX = ± 0.
010 Ordering Information Part Number AM42-0039 Package Ceramic Bolt Down Package Electrical Specifications: TA = +25°C, VDD = +9V, VGG adjusted for IDD = 1050 mA, Freq.
= 6.
40 to 7.
025 GHz Parameter Linear Gain Input VSWR Output VSWR Output Power Output Power vs.
Frequency Output Power vs.
Temperature (with respect to TA=+25°C) Drain Bias Current Gate Bias Voltage Gate Bias Current Thermal Resistance Second Harmonic Third Harmonic Abbv.
GL VSWRIN VSWROUT PSAT PSAT PSAT IDD VGG ΙGG θJC f2 f3 Test Conditions PIN ≤ -10 dBm PIN ≤ -10 dBm PIN ≤ -10 dBm PIN = +10 dBm, IDD=1050 mA Typ.
PIN = +10 dBm, IDD=1050 mA Typ.
PIN = +10 dBm, IDD=1050 mA Typ.
TA= -40°C to +70°C PIN = +10 dBm PIN = +10 dBm, ...


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