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MIG75J201H

Part Number	MIG75J201H
Manufacturer	Toshiba Semiconductor
Description	TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Published	Mar 26, 2005
Detailed Description	MIG75J201H TOSHIBA Intelligent Power Module Silicon N Channel IGBT MIG75J201H High Power Switching Applications Motor C...
Datasheet	MIG75J201H PDF File

Overview

MIG75J201H TOSHIBA Intelligent Power Module Silicon N Channel IGBT MIG75J201H High Power Switching Applications Motor Control Applications l Integrates inverter, brake power circuits & control circuits (IGBT drive units, protection units for over-current, under-voltage & over-temperature) in one package.
l The electrodes are isolated from case.
l High speed type IGBT : VCE (sat) = 2.
5 V (Max) toff = 3.
0 µs (Max) trr = 0.
30 µs (Max) l Package dimensions : TOSHIBA 2-110A1A l Weight : 520 g Equivalent Circuit 1 2001-05-29 MIG75J201H Maximum Ratings (Tj = 25°C ) Stage Characteristic Supply voltage Collector-emitter voltage Inverter Collector current Forward current Collector power dissipation Junction temperature Supply voltage Collector-emitter voltage Collector current Brake Reverse voltage Forward current Collector power dissipation Junction temperature Control supply voltage Control Input voltage Fault output voltage Fault output current Operating temperature Module Storage temperature range Isolation voltage Screw torque AC 1 minute M5 Condition P-N power terminal ― Tc = 25°C, DC Tc = 25°C, DC Tc = 25°C ― P-N power terminal ― Tc = 25°C, DC ― Tc = 25°C, DC Tc = 25°C ― VD-GND terminal IN-GND terminal FO-GND (L) terminal FO sink current ― ― Symbol VCC VCES IC IF PC Tj VCC VCES IC VR IF PC Tj VD VIN VFO IFO TC Tstg VISO ― Ratings 450 600 75 75 195 150 450 600 30 600 30 80 150 20 20 20 14 −20 ~ +100 −40 ~ +125 2500 3 Unit V V A A W °C V V A V A W °C V V V mA °C °C V Nm Electrical Characteristics (Tj = 25°C) a.
Inverter Stage Characteristic Collector cut-off current Collector-emitter saturation voltage Forward voltage Symbol ICEX VCE = 600V VD = 15 V, IC = 75 A VIN = 15 V → 0 V IF = 75A VCC = 300 V, IC = 75 A VD = 15 V, VIN = 15 V Inductive load Test Condition Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Min ― ― ― ― ― ― 0V (Note 1) ― ― ― Typ.
― ― 2.
0 2.
0 2.
1 1.
0 1.
2 0.
2 0.
1 Max 1 20 2.
5 ― 3.
0 2.
0 3.
0 0.
5 0.
3 µs Unit mA VCE (sat) VF ton V V Switching time toff tf ...

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MIG75J201H TOSHIBA Intelligent Power Module Silicon N Channel IGBT - Toshiba Semiconductor

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