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MIG75Q201H

Toshiba Semiconductor
Part Number MIG75Q201H
Manufacturer Toshiba Semiconductor
Description High Power Switching Applications Motor Control Applications
Published Mar 26, 2005
Detailed Description MIG75Q201H TOSHIBA Intelligent Power Module Silicon N Channel IGBT MIG75Q201H High Power Switching Applications Motor C...
Datasheet PDF File MIG75Q201H PDF File

MIG75Q201H
MIG75Q201H

Overview
MIG75Q201H TOSHIBA Intelligent Power Module Silicon N Channel IGBT MIG75Q201H High Power Switching Applications Motor Control Applications l Integrates inverter, brake power circuits & control circuits (IGBT drive units, protection units for over-current, under-voltage & over-temperature) in one package.
l The electrodes are isolated from case.
l High speed type IGBT : VCE (sat) = 3.
5 V (Max) toff = 2.
5 µs (Max) trr = 0.
21 µs (Max) l Package dimensions : TOSHIBA 2-136A1A l Weight : Equivalent Circuit 1 2001-05-29 MIG75Q201H Maximum Ratings (Tj = 25°C ) Stage Characteristic Supply voltage Collector-emitter voltage Inverter Collector current Forward current Collector power dissipation Ju...


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