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MIP165 Datasheet PDF

Panasonic Semiconductor
Part Number MIP165
Manufacturer Panasonic Semiconductor
Title Silicon MOS IC
Description Be sure to visit ChipDocs site for more information http://www.chipdocs.com Be sure to visit ChipDocs site for more information http://www.chipdo...
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File Size 64.59KB
Datasheet PDF File MIP165 PDF File


MIP165 MIP165 MIP165




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MIP0040MFL : DReovcisNioon. . T1 D4-EA-01881 Product Specification MIP0040MFL Type Application Structure Equivalent Circuit Package Silicon MOSFET type Integrated Circuit For Switching Power Supply Control CMOS type Figure 8 SO8-G2-B Marking A.ABSOLUTE MAXIMUM RATINGS (Ta=25℃±3℃) NO. Item Symbol 1 VIN Voltage 2 VCC Voltage 3 VDD Voltage 4 OUT Voltage 5 IS Voltage 6 TR Voltage 7 TR Current 8 Channel Temperature 9 Storage Temperature VIN VCC VDD VOUT VIS VTR ITR Tch Tstg Ratings -0.3 ~ 500 -0.3 ~ 45 -0.3 ~ 9 -0.3 ~ 30 -0.3 ~ 5 10 -5 150 -55 ~ +150 MIP004 Unit V V V V V V mA ℃ ℃ B.RECOMMENDED OPERATING CONDITIONS NO. Item Symbol 1 Junction Temperature Tj Conditions -40 ~ +125 Unit ℃ N.

MIP0040MS : MIP0040MS Type Application Structure Equivalent Circuit Out Line Silicon MOSFET type Integrated Circuit For Switching Power Supply Control CMOS type Figure 8 DIP7-A1 Marking A. ABSOLUTE MAXIMUM RATINGS (Ta= 25°C±3°C) No. Item Symbol 1 VIN Voltage 2 VCC Voltage 3 VDD Voltage 4 OUT Voltage 5 IS Voltage 6 TR Voltage 7 TR Current 8 Channel Temperature 9 Storage Temperature VIN VCC VDD VOUT VIS VTR ITR Tch Tstg Ratings –0.3 to 500 –0.3 to 45 –0.3 to 9 –0.3 to 30 –0.3 to 5 10 –5 150 –55 to +150 MIP004 Unit V V V V V V mA °C °C Publication date: March 2013 Ver. AEF Page 1 of 7 MIP0040MS B.ELECTRICAL CHARACTERISTICS (continued) No. Item Symbol Measure condition (Ta= 25°C±3°C) Mea.

MIP0122SY : w w a D . w S a t e e h U 4 t m o .c w w .D w t a S a e h U 4 t e .c m o w w w .D a S a t e e h U 4 t m o .c .

MIP0123SY : w w a D . w S a t e e h U 4 t m o .c w w .D w t a S a e h U 4 t e .c m o w w w .D a S a t e e h U 4 t m o .c .

MIP0124SY : w w a D . w S a t e e h U 4 t m o .c w w .D w t a S a e h U 4 t e .c m o w w w .D a S a t e e h U 4 t m o .c .

MIP0125SY : w w a D . w S a t e e h U 4 t m o .c w w .D w t a S a e h U 4 t e .c m o w w w .D a S a t e e h U 4 t m o .c .

MIP0129SY : w w a D . w S a t e e h U 4 t m o .c w w .D w t a S a e h U 4 t e .c m o w w w .D a S a t e e h U 4 t m o .c .

MIP0210SP : Intelligent Power Devices (IPDs) MIP0210SP Silicon MOS IC s Features q Single chip IC with high breakdown voltage power MOS FET and CMOS control circuits q Allowing to input worldwide mains (AC 85 to 274V) q A pulse-by-pulse overcurrent protection circuit and a timer autorestart circuit are integrated. unit: mm 0.5±0.1 1 2 3 8 1.2±0.25 7 6 5 6.3±0.2 9.4±0.3 s Applications q Switching power supply (to 7W) q AC adaptor q Battery charger 4 2.54±0.25 0.6 –0.1 +0.25 3.8±0.25 4.0±0.3 7.62±0.25 s Absolute Maximum Ratings (Ta = 25 ± 3°C) Parameter Drain voltage Control voltage Output current Control current Channel temperature Storage temperature Symbol VD VC ID IC Tch Tstg Ratings 700 .

MIP0210SY : Intelligent Power Devices (IPDs) MIP0210SY Silicon MOS IC s Features q Single chip IC with high breakdown voltage power MOS FET and CMOS control circuits q Allowing to input worldwide mains (AC 85 to 274V) q A pulse-by-pulse overcurrent protection circuit and a timer autorestart circuit are integrated. unit: mm 10.5±0.5 4.5±0.2 2.8±0.2 1.5±0.2 9.5±0.2 8.0±0.2 1.4±0.1 M Di ain sc te on na tin nc ue e/ d 6.8±0.1 15.4±0.3 4.2±0.3 s Applications φ3.7±0.1 13.5±0.5 Solder Dip s Absolute Maximum Ratings (Ta = 25 ± 3°C) Parameter Symbol Ratings 700 8 Drain voltage VD VC ID IC Control voltage Output current Control current Channel temperature Storage temperature s Block Diagram Control .

MIP0221SP : (planed maintMeaniantnecneatnycpee/,Dimsaciontnteinnaunecdeitnyclpue,deplsafnolleodwdiinsgc foontiurnuPreoddtyucptelidf,edciysccloentsitnaugee.dDisMcaionnttiennuaendtype)ce/ Intelligent Power Devices (IPDs) MIP0221SP, MIP0222SP, MIP0223SP, MIP0224SP Silicon MOS IC s Features q Single chip IC with high breakdown voltage power MOS FET and CMOS control circuits q Allowing to input worldwide mains (AC 85 to 274V) q A pulse-by-pulse overcurrent protection circuit and a timer auto- restart circuit are integrated. s Applications q Switching power supply (to 20W) q AC adaptor q Battery charger s Absolute Maximum Ratings (Ta = 25 ± 3°C) Parameter Symbol Ratings Drain voltage Control voltage .

MIP0221SY : Intelligent Power Devices (IPDs) MIP0221SY, MIP0222SY, MIP0223SY, MIP0224SY, MIP0225SY, MIP0226SY, MIP0227SY Silicon MOS IC s Features q Single chip IC with high breakdown voltage power MOS FET and CMOS control circuits q Allowing to input worldwide mains (AC 85 to 274V) q A pulse-by-pulse overcurrent protection circuit and a timer autorestart circuit are integrated. unit: mm 10.5±0.5 4.5±0.2 2.8±0.2 1.5±0.2 9.5±0.2 8.0±0.2 6.8±0.1 1.4±0.1 q Switching power supply (to 90W) q AC adaptor q Battery charger 15.4±0.3 4.2±0.3 φ3.7±0.1 1.4±0.1 13.5±0.5 Solder Dip 2.5±0.2 Parameter Drain voltage Control voltage Symbol VD VC Ratings 700 8 MIP0221SY 0.3 Unit V V 2.54±0.3 5.08±0.5 9.3 s .

MIP0222SP : (planed maintMeaniantnecneatnycpee/,Dimsaciontnteinnaunecdeitnyclpue,deplsafnolleodwdiinsgc foontiurnuPreoddtyucptelidf,edciysccloentsitnaugee.dDisMcaionnttiennuaendtype)ce/ Intelligent Power Devices (IPDs) MIP0221SP, MIP0222SP, MIP0223SP, MIP0224SP Silicon MOS IC s Features q Single chip IC with high breakdown voltage power MOS FET and CMOS control circuits q Allowing to input worldwide mains (AC 85 to 274V) q A pulse-by-pulse overcurrent protection circuit and a timer auto- restart circuit are integrated. s Applications q Switching power supply (to 20W) q AC adaptor q Battery charger s Absolute Maximum Ratings (Ta = 25 ± 3°C) Parameter Symbol Ratings Drain voltage Control voltage .

MIP0222SY : Intelligent Power Devices (IPDs) MIP0221SY, MIP0222SY, MIP0223SY, MIP0224SY, MIP0225SY, MIP0226SY, MIP0227SY Silicon MOS IC s Features q Single chip IC with high breakdown voltage power MOS FET and CMOS control circuits q Allowing to input worldwide mains (AC 85 to 274V) q A pulse-by-pulse overcurrent protection circuit and a timer autorestart circuit are integrated. unit: mm 10.5±0.5 4.5±0.2 2.8±0.2 1.5±0.2 9.5±0.2 8.0±0.2 6.8±0.1 1.4±0.1 q Switching power supply (to 90W) q AC adaptor q Battery charger 15.4±0.3 4.2±0.3 φ3.7±0.1 1.4±0.1 13.5±0.5 Solder Dip 2.5±0.2 Parameter Drain voltage Control voltage Symbol VD VC Ratings 700 8 MIP0221SY 0.3 Unit V V 2.54±0.3 5.08±0.5 9.3 s .

MIP0223SP : (planed maintMeaniantnecneatnycpee/,Dimsaciontnteinnaunecdeitnyclpue,deplsafnolleodwdiinsgc foontiurnuPreoddtyucptelidf,edciysccloentsitnaugee.dDisMcaionnttiennuaendtype)ce/ Intelligent Power Devices (IPDs) MIP0221SP, MIP0222SP, MIP0223SP, MIP0224SP Silicon MOS IC s Features q Single chip IC with high breakdown voltage power MOS FET and CMOS control circuits q Allowing to input worldwide mains (AC 85 to 274V) q A pulse-by-pulse overcurrent protection circuit and a timer auto- restart circuit are integrated. s Applications q Switching power supply (to 20W) q AC adaptor q Battery charger s Absolute Maximum Ratings (Ta = 25 ± 3°C) Parameter Symbol Ratings Drain voltage Control voltage .

MIP0223SY : Intelligent Power Devices (IPDs) MIP0221SY, MIP0222SY, MIP0223SY, MIP0224SY, MIP0225SY, MIP0226SY, MIP0227SY Silicon MOS IC s Features q Single chip IC with high breakdown voltage power MOS FET and CMOS control circuits q Allowing to input worldwide mains (AC 85 to 274V) q A pulse-by-pulse overcurrent protection circuit and a timer autorestart circuit are integrated. unit: mm 10.5±0.5 4.5±0.2 2.8±0.2 1.5±0.2 9.5±0.2 8.0±0.2 6.8±0.1 1.4±0.1 q Switching power supply (to 90W) q AC adaptor q Battery charger 15.4±0.3 4.2±0.3 φ3.7±0.1 1.4±0.1 13.5±0.5 Solder Dip 2.5±0.2 Parameter Drain voltage Control voltage Symbol VD VC Ratings 700 8 MIP0221SY 0.3 Unit V V 2.54±0.3 5.08±0.5 9.3 s .

MIP0224SP : (planed maintMeaniantnecneatnycpee/,Dimsaciontnteinnaunecdeitnyclpue,deplsafnolleodwdiinsgc foontiurnuPreoddtyucptelidf,edciysccloentsitnaugee.dDisMcaionnttiennuaendtype)ce/ Intelligent Power Devices (IPDs) MIP0221SP, MIP0222SP, MIP0223SP, MIP0224SP Silicon MOS IC s Features q Single chip IC with high breakdown voltage power MOS FET and CMOS control circuits q Allowing to input worldwide mains (AC 85 to 274V) q A pulse-by-pulse overcurrent protection circuit and a timer auto- restart circuit are integrated. s Applications q Switching power supply (to 20W) q AC adaptor q Battery charger s Absolute Maximum Ratings (Ta = 25 ± 3°C) Parameter Symbol Ratings Drain voltage Control voltage .

MIP0224SY : Intelligent Power Devices (IPDs) MIP0221SY, MIP0222SY, MIP0223SY, MIP0224SY, MIP0225SY, MIP0226SY, MIP0227SY Silicon MOS IC s Features q Single chip IC with high breakdown voltage power MOS FET and CMOS control circuits q Allowing to input worldwide mains (AC 85 to 274V) q A pulse-by-pulse overcurrent protection circuit and a timer autorestart circuit are integrated. unit: mm 10.5±0.5 4.5±0.2 2.8±0.2 1.5±0.2 9.5±0.2 8.0±0.2 6.8±0.1 1.4±0.1 q Switching power supply (to 90W) q AC adaptor q Battery charger 15.4±0.3 4.2±0.3 φ3.7±0.1 1.4±0.1 13.5±0.5 Solder Dip 2.5±0.2 Parameter Drain voltage Control voltage Symbol VD VC Ratings 700 8 MIP0221SY 0.3 Unit V V 2.54±0.3 5.08±0.5 9.3 s .




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