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MJ11018

Part Number	MJ11018
Manufacturer	ON Semiconductor
Description	DARLINGTON POWER TRANSISTORS
Published	Mar 26, 2005
Detailed Description	MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ11017/D Complementary Darlington Silicon Power Transis...
Datasheet	MJ11018 PDF File

Overview

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ11017/D Complementary Darlington Silicon Power Transistors .
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designed for use as general purpose amplifiers, low frequency switching and motor control applications.
• High dc Current Gain @ 10 Adc — hFE = 400 Min (All Types) • Collector–Emitter Sustaining Voltage VCEO(sus) = 150 Vdc (Min) – MJ11018, 17 VCEO(sus) = 250 Vdc (Min) – MJ11022, 21 • Low Collector–Emitter Saturation VCE(sat) = 1.
0 V (Typ) @ IC = 5.
0 A VCE(sat) = 1.
8 V (Typ) @ IC = 10 A • Monolithic Construction • 100% SOA Tested @ VCE = 44 V, IC = 4.
0 A, t = 250 ms.
MAXIMUM RATINGS MJ11017 MJ11021* NPN MJ11018* MJ11022 *Motorola Preferred Device PNP ÎÎÎÎÎÎÎÎÎÎ...

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