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LTE42012R

NXP
Part Number LTE42012R
Manufacturer NXP
Description NPN microwave power transistor
Published Mar 27, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET LTE42012R NPN microwave power transistor Product specification Supersedes data of Ju...
Datasheet PDF File LTE42012R PDF File

LTE42012R
LTE42012R

Overview
DISCRETE SEMICONDUCTORS DATA SHEET LTE42012R NPN microwave power transistor Product specification Supersedes data of June 1992 1997 Feb 21 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Interdigitated structure provides high emitter efficiency • Diffused emitter ballasting resistor provides excellent current sharing and withstanding a high VSWR • Gold metallization realizes very stable characteristics and excellent lifetime • Multicell geometry gives good balance of dissipated power and low thermal resistance • Input matching cell improves input impedance and allows an easier design of wideband circuits.
APPLICATIONS • Common emitter class-A power amplifiers up to 4.
2 GHz in CW conditions for military and professional applications.
DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT440A metal ceramic flange package with the emitter connected to the flange.
Marking code: 198 3 2 Top view olumns LTE42012R PINNING - SOT440A PIN 1 2 3 collector base emitter connected to flange DESCRIPTION 1 c b e MAM131 Fig.
1 Simplified outline and symbol.
QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common emitter class-A selective amplifier.
MODE OF OPERATION Class-A (CW) f (GHz) 4.
2 VCE (V) 16 IC (mA) 400 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide.
The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions.
After use, dispose of as chemical or special waste according to the regulations applying at the location of the user.
It must never be thrown out with the general or domestic waste.
PL1 (W) ≥1 Gpo (dB) ≥6 Zi (Ω) 7.
5 + j12 ZL (Ω) 4 − j8 1997 Feb 21 2 Philips Semiconductors Product specification NPN microwave power transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC...


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