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DF10SC4M

Shindengen Electric Mfg.Co.Ltd
Part Number DF10SC4M
Manufacturer Shindengen Electric Mfg.Co.Ltd
Description Schottky Rectifiers (SBD) (40V 10A)
Published Mar 27, 2005
Detailed Description SHINDENGEN Schottky Rectifiers (SBD) Dual DF10SC4M 40V 10A FEATURES •œ SMT •œ Tj150•Ž •œ PRRSM avalanche guaranteed •œ ...
Datasheet PDF File DF10SC4M PDF File

DF10SC4M
DF10SC4M

Overview
SHINDENGEN Schottky Rectifiers (SBD) Dual DF10SC4M 40V 10A FEATURES •œ SMT •œ Tj150•Ž •œ PRRSM avalanche guaranteed •œ High current capacity with Small Package APPLICATION •œ Switching OUTLINE DIMENSIONS Case : STO-220 Unit : mm power supply •œ DC/DC converter •œ Home Appliances, Office Equipment •œ Telecommunication RATINGS •œAbsolute Maximum Ratings (If not specified Tc=25•Ž) Item Symbol Conditions Ratings Unit Storage Temperature Tstg -40•`150 •Ž Operating Junction Temperature Tj 150 •Ž V 40 V Maximum Reverse Voltage RM V 45 V Repetitive Peak Surge RRSM Reverse Pulse width Voltage 0.
5ms, duty 1/40 I O 50Hz 10 Io/2, A With Average Rectified Forward Current sine wave, R-load, Rating for each diode 50Hz sine wave, R-load, Rating for each diode 6.
8 Io/2, On A I Peak Surge Forward FSM Current 50Hz sine wave, Non-repetitive 1 cycle peak 100 value, A Tj=125 P 330 W Repetitive Peak Surge RRSM Reverse Pulse width Power 10ƒÊs, Rating of per diode, Tj=25•Ž •œElectrical Characteristics (If not specified Tc=25•Ž) Item Symbol Conditions Ratings Unit Forward Voltage V F I F =5A, Pulse measurement, Rating of per Max.
0.
55 diode V I Max.
3.
5 Reverse Current R V R =V R,M Pulse measurement, Rating of per diodemA Cj f=1MHz, =10V, V Rating of per diode Typ.
180 pF Junction Capacitance R Thermal Resistance Įjc junction to case Max.
3 •Ž/W ƒÆja junction to ambient, On Al-Cu substrate Max.
25 Copyright & Copy;2000 Shindengen Electric Mfg.
Co.
Ltd DF10SC4M Forward Voltage 10 Forward Current IF [A] Tc=150 °C [MAX] Tc=150 °C [TYP] Tc=25 °C [MAX] Tc=25 °C [TYP] 1 Pulse measurement per diode 0.
1 0 0.
2 0.
4 0.
6 0.
8 1 1.
2 1.
4 1.
6 Forward Voltage VF [V] DF10SC4M Junction Capacitance f=1MHz Tc=25°C TYP per diode 1000 Junction Capacitance Cj [pF] 100 0.
1 1 10 Reverse Voltage VR [V] DF10SC4M 1000 Reverse Current Tc=150 °C [MAX] 100 Tc=150 °C [TYP] Reverse Current IR [mA] Tc=125 °C [TYP] 10 Tc=100 °C [TYP] 1 Tc=75 °C [TYP] 0.
1 Pulse measurement per diode 0.
01 0 ...


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