DatasheetsPDF.com

DBES105A

United Monolithic Semiconductors
Part Number DBES105A
Manufacturer United Monolithic Semiconductors
Description Flip-Chip Dual Diode
Published Mar 27, 2005
Detailed Description DBES105a Flip-Chip Dual Diode GaAs Diode Description The DBES105a is a dual Schottky diode based on a low cost 1µm stepp...
Datasheet PDF File DBES105A PDF File

DBES105A
DBES105A

Overview
DBES105a Flip-Chip Dual Diode GaAs Diode Description The DBES105a is a dual Schottky diode based on a low cost 1µm stepper process including a bump technology.
The parasitic inductances are reduced and result in a very high operating frequency.
This flip-chip dual diode has been designed for high performance mixer applications.
Main Features ■ High cut-off frequencies : 3THz ■ High breakdown voltage : < -5V @ 20µA ■ Good ideality factor : 1.
2 ■ Low parasitic inductances ■ Low cost technology ■ Dimensions : 0.
53 x 0.
23 x 0.
1mm Main Characteristics Tamb.
= 25°C Symbol Wu Fco n BVak Gate Width Cut-off frequency Ideality factor Anode-cathode break-down voltage Parameter Typ 5 3 1.
2 < -5 Unit µm THz V ESD Protection : Electrostatic discharge sensitive device.
Observe handling precautions ! Ref.
: DSDBES1051067 -08-Mar-01 1/4 Specifications subject to change without notice United Monolithic Semiconductors S.
A.
S.
Route Départementale 128 - B.
P.
46 - 91401 Orsay Cedex France Tel.
: +...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)