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DCB010

Sanyo Semicon Device
Part Number DCB010
Manufacturer Sanyo Semicon Device
Description Very High-Speed Switching Diode
Published Mar 27, 2005
Detailed Description Ordering number : EN1895B DCB010 Silicon Epitaxial Planar Type (Cathode Common) DCB010 Very High-Speed Switching Diode...
Datasheet PDF File DCB010 PDF File

DCB010
DCB010

Overview
Ordering number : EN1895B DCB010 Silicon Epitaxial Planar Type (Cathode Common) DCB010 Very High-Speed Switching Diode Features • Package Dimensions unit : mm 1169A [DCB010] 0.
5 0.
4 0.
16 0 to 0.
1 • • Ideally suited for use in hybrid ICs because of very small-sized package.
Fast switching speed.
Small interterminal capacitance.
Electrical Connection Cathode 3 3 1 0.
95 0.
95 2 1.
9 2.
9 0.
5 1.
5 2.
5 1 : Anode 2 : Anode 3 : Cathode SANYO : CP 1 2 (Top view) Anode Anode Specifications Absolute Maximum Ratings at Ta=25°C Parameter Peak Reverse Voltage Reverse Voltage Peak Forward Current Average Rectified Current Surge Current (1µs) Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VRM VR IFM IFMg IO IOg IFSM IFSMg P Tj Tstg g : Total value Conditions Ratings 85 80 300 450 100 150 4 6 200 125 --55 to +125 Unit V V mA mA mA mA A A mW °C °C Any and all SANYO products described or contained herein do not have specifications that can handle applications t...


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