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D2282UK

Seme LAB
Part Number D2282UK
Manufacturer Seme LAB
Description METAL GATE RF SILICON FET
Published Mar 27, 2005
Detailed Description TetraFET LAB MECHANICAL DATA Dimensions in mm. 0 .3 2 0 .2 4 0 .1 0 0 .0 2 16˚ m ax. 13˚ SEME D2282UK METAL GATE RF S...
Datasheet PDF File D2282UK PDF File

D2282UK
D2282UK

Overview
TetraFET LAB MECHANICAL DATA Dimensions in mm.
0 .
3 2 0 .
2 4 0 .
1 0 0 .
0 2 16˚ m ax.
13˚ SEME D2282UK METAL GATE RF SILICON FET GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 750mW – 6V – 1GHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss 1 .
7 0 m ax.
10˚ m ax.
6 .
7 6 .
3 3 .
1 2 .
9 4 3 .
7 7 .
3 3 .
3 6 .
7 • SIMPLE BIAS CIRCUITS • LOW NOISE (Typical < 2dB NF) • HIGH GAIN – 8dB MINIMUM • SURFACE MOUNT 3 1 2 1 .
0 5 0 .
8 5 2 .
3 0 4 .
6 0 0 .
8 0 0 .
6 0 APPLICATIONS • VHF/UHF COMMUNICATIONS from DC to 2.
5 GHz SOT–223 PIN 1 PIN 3 GATE SOURCE PIN 2 PIN 4 DRAIN DRAIN ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj Power Dissipation Drain – Source Breakdown Voltage Gate – Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature 2W 40V ±20V 400mA –65 to 125°C 150°C Semelab plc.
Telephone (01455) 556565.
Telex: 341927.
Fax (01455) 552612.
Prelim.
7/96 LAB ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min.
BVDSS IDSS IGSS gfs GPS η VSWR Ciss Coss Crss Drain–Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Forward Transconductance* Common Source Power Gain Drain Efficiency Load Mismatch Tolerance Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS = 0 ID = 10mA VDS = 12.
5V VGS = 0 VGS = 20V ID = 10mA VDS = 10V PO = 750mW VDS = 6V f = 1GHz VDS = 0V f = 1MHz VDS = 12.
5V f = 1MHz VDS = 12.
5V f = 1MHz VGS = 0 VGS = 0 VGS = –5V IDQ = 75mA VDS = 0 VDS = VGS ID = 0.
2A 1 0.
18 8 40 10:1 12 10 1 pF 40 1 1 5 SEME D2282UK Typ.
Max.
Unit V mA µA V mhos dB % — VGS(th) Gate Threshold Voltage* * Pulse Test: Pulse Duration = 300 µs , Duty Cycle ≤ 2% THERMAL DATA RTHj–case Thermal Resistance Junction – Case Max.
70°C / W Semelab plc.
Telephone (01455) 556565.
Telex: 341927.
Fax (01455) 552612.
Prelim.
7/96 ...


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