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D1003UK

Seme LAB
Part Number D1003UK
Manufacturer Seme LAB
Description METAL GATE RF SILICON FET
Published Mar 27, 2005
Detailed Description TetraFET D1003UK METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 2 D E 4 M 3 GOLD METALLISED MULTI-PURPOSE SILI...
Datasheet PDF File D1003UK PDF File

D1003UK
D1003UK

Overview
TetraFET D1003UK METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 2 D E 4 M 3 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 60W – 28V – 175MHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN F G H K I J • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE DM PIN 1 PIN 3 SOURCE SOURCE PIN 2 PIN 4 DRAIN GATE DIM A B C D E F G H I J K M mm 24.
76 18.
42 45° 6.
35 3.
17 Dia.
5.
71 12.
7 Dia.
6.
60 0.
13 4.
32 3.
17 26.
16 Tol.
0.
13 0.
13 5° 0.
13 0.
13 0.
13 0.
13 REF 0.
02 0.
13 0.
13 0.
25 Inches 0.
975 0.
725 45° 0.
25 0.
125 Dia.
0.
225 0.
500 Dia.
0.
260 0.
005 0.
170 0.
125 1.
03 Tol.
0.
005 0.
005 5° 0.
005 0.
005 0.
005 0.
005 REF 0.
001 0.
005 0.
005 0.
010 • HIGH GAIN – 16 dB MINIMUM APPLICATIONS • HF/VHF COMMUNICATIONS from 1 MHz to 175 MHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj Power Dissipation Drain – Source Breakdown Voltage Gate – Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature 117W 70V ±20V 15A –65 to 150°C 200°C Semelab plc.
Telephone +44(0)1455 556565.
Fax +44(0)1455 552612.
Website: http://www.
semelab.
co.
uk E-mail: sales@semelab.
co.
uk Prelim.
6/99 D1003UK ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min.
BVDSS IDSS IGSS gfs GPS η Ciss Coss Crss Drain–Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Forward Transconductance * Common Source Power Gain Drain Efficiency Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS = 0 VDS = 28V VGS = 20V ID = 10mA VDS = 10V PO = 60W VDS = 28V f = 175MHz VDS = 0 VDS = 28V VDS = 28V VGS = –5V f = 1MHz VGS = 0 VGS = 0 f = 1MHz f = 1MHz IDQ = 0.
3A ID = 100mA VGS = 0 VDS = 0 VDS = VGS ID = 3A 1 2.
4 16 50 20:1 70 Typ.
Max.
Unit V 1 1 7 mA µA V S dB % — 180 90 7.
5 pF pF pF VGS(th) Gate Threshold Voltage * VSWR Load Mismatch Tolerance * Pulse Test: Pulse Duration = 300 µs , Duty Cycle ≤ 2% H...


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