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D1016UK

Part Number	D1016UK
Manufacturer	Seme LAB
Description	METAL GATE RF SILICON FET
Published	Mar 27, 2005
Detailed Description	TetraFET D1016UK METAL GATE RF SILICON FET MECHANICAL DATA B H C 2 3 1 A D G E 5 4 F GOLD METALLISED MULTI-PURPOS...
Datasheet	D1016UK PDF File

Overview

TetraFET D1016UK METAL GATE RF SILICON FET MECHANICAL DATA B H C 2 3 1 A D G E 5 4 F GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W – 28V – 500MHz PUSH–PULL FEATURES • SIMPLIFIED AMPLIFIER DESIGN J K I N M O • SUITABLE FOR BROAD BAND APPLICATIONS • VERY LOW Crss • USEFUL PO AT 1GHz • LOW NOISE DQ PIN 1 PIN 3 PIN 5 SOURCE (COMMON) PIN 2 DRAIN 2 PIN 4 GATE 1 DRAIN 1 GATE 2 DIM mm A 16.
38 B 1.
52 C 45° D 6.
35 E 3.
30 F 14.
22 G 1.
27 x 45° H 1.
52 I 6.
35 J 0.
13 K 2.
16 M 1.
52 N 5.
08 O 18.
90 Tol.
0.
26 0.
13 5° 0.
13 0.
13 0.
13 0.
13 0.
13 0.
13 0.
02 0.
13 0.
13 MAX 0.
13 Inches 0.
645 0.
060 45° 0.
250 0.
130 0.
560 0.
05 x 45° 0.
060 0.
250 0.
005 0.
085 0.
060 0.
200 0.
744 Tol.
0.
010 0.
005 5° 0.
005 0.
005 0.
005 0.
005 0.
005 0.
005 0.
001 0.
005 0.
005 MAX 0.
005 • HIGH GAIN – 13 dB MINIMUM APPLICATIONS • VHF/UHF COMMUNICATIONS from 1 MHz to 1 GHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj * Per Side Semelab plc.
Power Dissipation Drain – Source Breakdown Voltage * Gate – Source Breakdown Voltage * Drain Current * Storage Temperature Maximum Operating Junction Temperature 100W 70V ±20V 5A –65 to 150°C 200°C Telephone +44(0)1455 556565.
Fax +44(0)1455 552612.
E-mail: sales@semelab.
co.
uk Website: http://www.
semelab.
co.
uk Prelim.
12/00 D1016UK ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min.
PER SIDE BVDSS IDSS IGSS VGS(th) gfs GPS Drain–Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Gate Threshold Voltage* Forward Transconductance* Common Source Power Gain Drain Efficiency Load Mismatch Tolerance Input Capacitance Output Capacitance VGS = 0 VDS = 28V VGS = 20V ID = 10mA VDS = 10V PO = 40W VDS = 28V f = 400MHz IDQ = 0.
4A ID = 100mA VGS = 0 VDS = 0 VDS = VGS ID = 1A 1 0.
8 13 50 20:1 VGS = –5V f = 1MHz VGS = 0 VGS = 0 f = 1MHz f = 1MHz 70 Typ.
Max.
Unit V 1 1 7 mA mA V S dB % — TOTAL DEVICE h VSWR Ciss Coss Crss PER SIDE VDS = 28V VDS = 28V 6...

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D1016UK METAL GATE RF SILICON FET - Seme LAB

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