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D1019UK

Seme LAB
Part Number D1019UK
Manufacturer Seme LAB
Description METAL GATE RF SILICON FET
Published Mar 27, 2005
Detailed Description TetraFET D1019UK METAL GATE RF SILICON FET MECHANICAL DATA C 1 2 4 3 A GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF...
Datasheet PDF File D1019UK PDF File

D1019UK
D1019UK

Overview
TetraFET D1019UK METAL GATE RF SILICON FET MECHANICAL DATA C 1 2 4 3 A GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 28V – 175MHz SINGLE ENDED B FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS D G H • LOW Crss • SIMPLE BIAS CIRCUITS E F PIN 1 PIN 3 DRAIN GATE PIN 2 PIN 4 SOURCE SOURCE • LOW NOISE • HIGH GAIN – 16 dB MINIMUM DIM A B C D E F G H mm 26.
16 5.
72 45° 7.
11 0.
13 1.
52 0.
43 7.
67 Tol.
0.
13 0.
13 5° 0.
13 0.
02 0.
13 0.
20 REF Inches 1.
030 0.
225 45° 0.
280 0.
005 0.
55 0.
060 0.
120 Tol.
0.
015 0.
005 5° 0.
005 0.
001 0.
005 0.
008 REF APPLICATIONS • HF/VHF/UHF COMMUNICATIONS from 1 MHz to 175 MHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj Power Dissipation Drain – Source Breakdown Voltage Gate – Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature 50W 70V ±20V 5A –65 to 150°C 200°C Semelab plc.
Telephone +44(0)1455 556565.
Fax +44(0)1455 552612.
Website: http://www.
semelab.
co.
uk E-mail: sales@semelab.
co.
uk 6/99 D1019UK ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min.
BVDSS IDSS IGSS gfs GPS η Ciss Coss Crss Drain–Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Forward Transconductance* Common Source Power Gain Drain Efficiency Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS = 0 VDS = 28V VGS = 20V ID = 10mA VDS = 10V PO = 20W VDS = 28V f = 175MHz VDS = 28V VDS = 28V VDS = 28V VGS = –5V f = 1MHz VGS = 0 VGS = 0 f = 1MHz f = 1MHz IDQ = 0.
1A ID = 100mA VGS = 0 VDS = 0 VDS = VGS ID = 1A 1 0.
8 16 50 20:1 70 Typ.
Max.
Unit V 1 1 7 mA µA V S dB % — 60 30 2.
5 pF pF pF VGS(th) Gate Threshold Voltage* VSWR Load Mismatch Tolerance * Pulse Test: Pulse Duration = 300 µs , Duty Cycle ≤ 2% HAZARDOUS MATERIAL WARNING The ceramic portion of the device between leads and metal flange is beryllium oxide.
Beryllium oxide dust is hig...


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