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D1022UK

Seme LAB
Part Number D1022UK
Manufacturer Seme LAB
Description METAL GATE RF SILICON FET
Published Mar 27, 2005
Detailed Description TetraFET D1022UK METAL GATE RF SILICON FET MECHANICAL DATA A K B (2 pls) E C 1 2 3 D 5 4 GOLD METALLISED MULTI-P...
Datasheet PDF File D1022UK PDF File

D1022UK
D1022UK

Overview
TetraFET D1022UK METAL GATE RF SILICON FET MECHANICAL DATA A K B (2 pls) E C 1 2 3 D 5 4 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 100W – 28V – 500MHz PUSH–PULL FEATURES • SIMPLIFIED AMPLIFIER DESIGN G (4 pls) F H J I M N • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE DK PIN 1 PIN 3 PIN 5 SOURCE (COMMON) PIN 2 DRAIN 2 GATE 1 PIN 4 DRAIN 1 GATE 2 DIM A B C D E F G H I J K M N mm 6.
45 1.
65R 45° 16.
51 6.
47 18.
41 1.
52 4.
82 24.
76 1.
52 0.
81R 0.
13 2.
16 Tol.
0.
13 0.
13 5° 0.
76 0.
13 0.
13 0.
13 0.
13 0.
13 0.
13 0.
02 0.
13 Inches 0.
254 0.
65R 45° 0.
650 0.
255 0.
725 0.
060 0.
190 0.
975 0.
060 0.
032R 0.
005 0.
085 Tol.
0.
005 0.
005 5° 0.
03 0.
005 0.
005 0.
005 0.
005 0.
005 0.
005 0.
001 0.
005 • HIGH GAIN – 10 dB MINIMUM APPLICATIONS • HF/VHF/UHF COMMUNICATIONS from 1 MHz to 500 MHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj Power Dissipation Drain – Source Breakdown Voltage Gate – Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature 292W 70V ±20V 15A –65 to 150°C 200°C Semelab plc.
Telephone +44(0)1455 556565.
Fax +44(0)1455 552612.
E-mail: sales@semelab.
co.
uk Website: http://www.
semelab.
co.
uk Prelim.
11/00 D1022UK ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min.
PER SIDE BVDSS IDSS IGSS VGS(th) gfs Drain–Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Gate Threshold Voltage* Forward Transconductance* Gate Threshold Voltage Matching Between Sides VGS = 0 VDS = 28V VGS = 20V ID = 10mA VDS = 10V ID = 10mA ID = 100mA VGS = 0 VDS = 0 VDS = VGS ID = 3A VDS = VGS 1 2.
4 70 Typ.
Max.
Unit V 3 1 7 mA mA V mhos VGS(th)match 0.
1 V TOTAL DEVICE GPS h Common Source Power Gain Drain Efficiency Load Mismatch Tolerance Input Capacitance Output Capacitance PO = 100W VDS = 28V f = 500MHz IDQ = 1.
2A 10 50 20:1 VGS = –5V f = 1MHz VGS = 0 VGS = 0 f = 1MHz f = 1MH...


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