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D1027UK

Seme LAB
Part Number D1027UK
Manufacturer Seme LAB
Description METAL GATE RF SILICON FET
Published Mar 27, 2005
Detailed Description TetraFET D1027UK METAL GATE RF SILICON FET MECHANICAL DATA C (2 pls) B G (typ) 2 1 H D 3 P (2 pls) A 5 4 GOLD M...
Datasheet PDF File D1027UK PDF File

D1027UK
D1027UK

Overview
TetraFET D1027UK METAL GATE RF SILICON FET MECHANICAL DATA C (2 pls) B G (typ) 2 1 H D 3 P (2 pls) A 5 4 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 150W – 28V – 175MHz PUSH–PULL FEATURES • SIMPLIFIED AMPLIFIER DESIGN E (4 pls) F I N M O J K • SUITABLE FOR BROAD BAND APPLICATIONS DRAIN 1 GATE 2 DR PIN 1 PIN 3 PIN 5 SOURCE (COMMON) DRAIN 2 GATE 1 DIM A B C D E F G H I J K M N O P Millimetres 19.
05 10.
77 45° 9.
78 5.
71 27.
94 1.
52R 10.
16 22.
22 0.
13 2.
72 1.
70 5.
08 34.
03 1.
57R Tol.
0.
50 0.
13 5° 0.
13 0.
13 0.
13 0.
13 0.
13 MAX 0.
02 0.
13 0.
13 0.
50 0.
13 0.
08 PIN 2 PIN 4 • LOW Crss • SIMPLE BIAS CIRCUITS Inches 0.
75 0.
424 45° 0.
385 0.
225 1.
100 0.
060R 0.
400 0.
875 0.
005 0.
107 0.
067 0.
200 1.
340 0.
062R Tol.
0.
020 0.
005 5° 0.
005 0.
005 0.
005 0.
005 0.
005 MAX 0.
001 0.
005 0.
005 0.
020 0.
005 0.
003 • LOW NOISE • HIGH GAIN – 13 dB MINIMUM APPLICATIONS • VHF/UHF COMMUNICATIONS from 1 MHz to 200 MHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj Power Dissipation Drain – Source Breakdown Voltage Gate – Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature 438W 70V ±20V 30A –65 to 150°C 200°C Semelab plc.
Telephone +44(0)1455 556565.
Fax +44(0)1455 552612.
E-mail: sales@semelab.
co.
uk Website: http://www.
semelab.
co.
uk Prelim.
2/00 D1027UK ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min.
PER SIDE BVDSS IDSS IGSS VGS(th) gfs Drain–Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Gate Threshold Voltage* Forward Transconductance* Gate Threshold Voltage Matching Between Sides VGS = 0 VDS = 28V VGS = 20V ID = 10mA VDS = 10V ID = 10mA ID = 100mA VGS = 0 VDS = 0 VDS = VGS ID = 6A VDS = VGS 1 4.
8 70 Typ.
Max.
Unit V 6 1 7 mA mA V mhos VGS(th)match 0.
1 V TOTAL DEVICE GPS Common Source Power Gain Drain Efficiency Load Mismatch Tolerance Input Capacitance Output Capacitance h PO = 150W VDS = 28V f =...


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