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D2003UK

Part Number	D2003UK
Manufacturer	Seme LAB
Description	METAL GATE RF SILICON FET
Published	Mar 27, 2005
Detailed Description	TetraFET D2003UK METAL GATE RF SILICON FET MECHANICAL DATA B H C 2 3 1 A D E 5 4 F G GOLD METALLISED MULTI-PURPOSE SI...
Datasheet	D2003UK PDF File

Overview

TetraFET D2003UK METAL GATE RF SILICON FET MECHANICAL DATA B H C 2 3 1 A D E 5 4 F G GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 28V – 1GHz PUSH–PULL FEATURES • SIMPLIFIED AMPLIFIER DESIGN J K I N M O • SUITABLE FOR BROAD BAND APPLICATIONS • VERY LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE DQ PIN 1 PIN 3 PIN 5 SOURCE (COMMON) PIN 2 DRAIN 2 PIN 4 GATE 1 DRAIN 1 GATE 2 DIM mm A 16.
38 B 1.
52 C 45° D 6.
35 E 3.
30 F 14.
22 G 1.
27 x 45° H 1.
52 I 6.
35 J 0.
13 K 2.
16 M 1.
52 N 5.
08 O 18.
90 Tol.
0.
26 0.
13 5° 0.
13 0.
13 0.
13 0.
13 0.
13 0.
13 0.
02 0.
13 0.
13 MAX 0.
13 Inches 0.
645 0.
060 45° 0.
250 0.
130 0.
560 0.
05 x 45° 0.
060 0.
250 0.
005 0.
085 0.
060 0.
200 0.
744 Tol.
0.
010 0.
005 5° 0.
005 0.
005 0.
005 0.
005 0.
005 0.
005 0.
001 0.
005 0.
005 MAX 0.
005 • HIGH GAIN – 13 dB MINIMUM APPLICATIONS • VHF/UHF COMMUNICATIONS from 50 MHz to 1 GHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj * Per Side Semelab plc.
Power Dissipation Drain – Source Breakdown Voltage * Gate – Source Breakdown Voltage * Drain Current * Storage Temperature Maximum Operating Junction Temperature 35W 65V ±20V 1A –65 to 150°C 200°C Telephone +44(0)1455 556565.
Fax +44(0)1455 552612.
E-mail: sales@semelab.
co.
uk Website: http://www.
semelab.
co.
uk Document Number 3416 Issue 1 D2003UK ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min.
PER SIDE BVDSS IDSS IGSS VGS(th) gfs GPS η VSWR Ciss Coss Crss Drain–Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Gate Threshold Voltage* Forward Transconductance* Common Source Power Gain Drain Efficiency Load Mismatch Tolerance Input Capacitance Output Capacitance VGS = 0 VDS = 28V VGS = 20V ID = 10mA VDS = 10V PO = 5W VDS = 28V f = 1GHz IDQ = 0.
2A ID = 10mA VGS = 0 VDS = 0 VDS = VGS ID = 1A 1 0.
18 13 40 20:1 65 Typ.
Max.
Unit V 1 1 7 mA µA V S dB % — 12 6 0.
5 pF pF pF TOTAL DEVICE PER SIDE VDS = 28V VDS = 28V VGS = –5V f = 1MHz VGS = 0 VGS...

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D2003UK METAL GATE RF SILICON FET - Seme LAB

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