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D2004UK

Seme LAB
Part Number D2004UK
Manufacturer Seme LAB
Description METAL GATE RF SILICON FET
Published Mar 27, 2005
Detailed Description TetraFET D2004UK METAL GATE RF SILICON FET MECHANICAL DATA A K B (2 pls) E C 1 2 3 D 5 4 GOLD METALLISED MULTI-P...
Datasheet PDF File D2004UK PDF File

D2004UK
D2004UK

Overview
TetraFET D2004UK METAL GATE RF SILICON FET MECHANICAL DATA A K B (2 pls) E C 1 2 3 D 5 4 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 28V – 1GHz PUSH–PULL FEATURES • SIMPLIFIED AMPLIFIER DESIGN G (4 pls) F H J I M N • SUITABLE FOR BROAD BAND APPLICATIONS • VERY LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE DK PIN 1 PIN 3 PIN 5 SOURCE (COMMON) PIN 2 DRAIN 2 GATE 1 DIM A B C D E F G H I J K M N mm 6.
45 1.
65R 45° 16.
51 6.
47 18.
41 1.
52 4.
82 24.
76 1.
52 0.
81R 0.
13 2.
16 Tol.
0.
13 0.
13 5° 0.
76 0.
13 0.
13 0.
13 0.
25 0.
13 0.
13 0.
13 0.
02 0.
13 Inches 0.
254 0.
065R 45° 0.
650 0.
255 0.
725 0.
060 0.
190 0.
975 0.
060 0.
032R 0.
005 0.
085 Tol.
0.
005 0.
005 5° 0.
03 0.
005 0.
005 0.
005 0.
010 0.
005 0.
005 0.
005 0.
001 0.
005 PIN 4 DRAIN 1 GATE 2 • HIGH GAIN – 10 dB MINIMUM APPLICATIONS • HF/VHF/UHF COMMUNICATIONS from DC to 2 GHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj * Per Side Semelab plc.
Power Dissipation Drain – Source Breakdown Voltage * Gate – Source Breakdown Voltage * Drain Current * Storage Temperature Maximum Operating Junction Temperature 58W 65V ±20V 2A –65 to 150°C 200°C Telephone +44(0)1455 556565.
Fax +44(0)1455 552612.
E-mail: sales@semelab.
co.
uk Website: http://www.
semelab.
co.
uk Prelim.
01/01 D2004UK ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min.
PER SIDE BVDSS IDSS IGSS gfs GPS Drain–Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Forward Transconductance * VGS = 0 VDS = 28V VGS = 20V ID = 10mA VDS = 10V PO = 10W VDS = 28V f = 1GHz IDQ = 0.
4A ID = 10mA VGS = 0 VDS = 0 VDS = VGS ID = 0.
4A 1 0.
36 10 40 20:1 65 Typ.
Max.
Unit V 0.
4 1 7 mA mA V S dB % — VGS(th) Gate Threshold Voltage * TOTAL DEVICE Common Source Power Gain Drain Efficiency VSWR Load Mismatch Tolerance h Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance PER SIDE VDS = 0V VDS = 28V VDS = 28V VGS = –5V f = 1MHz VGS = ...


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