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D2007UK

Seme LAB
Part Number D2007UK
Manufacturer Seme LAB
Description METAL GATE RF SILICON FET
Published Mar 27, 2005
Detailed Description TetraFET D2007UK METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 2 D 4 M 3 E F GOLD METALLISED MULTI-PURPOSE S...
Datasheet PDF File D2007UK PDF File

D2007UK
D2007UK

Overview
TetraFET D2007UK METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 2 D 4 M 3 E F GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 28V – 400MHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN G H K I J • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • SIMPLE BIAS CIRCUITS Tol.
0.
005 0.
005 5° 0.
005 0.
005 0.
005 0.
005 REF 0.
001 0.
005 0.
005 0.
010 DA PIN 1 PIN 3 SOURCE SOURCE DIM A B C D E F G H I J K M mm 24.
76 18.
42 45° 6.
35 3.
17 5.
71 9.
52 6.
60 0.
13 4.
32 2.
54 20.
32 PIN 2 PIN 4 Tol.
0.
13 0.
13 5° 0.
13 0.
13 0.
13 0.
13 REF 0.
02 0.
13 0.
13 0.
25 DRAIN GATE Inches 0.
975 0.
725 45° 0.
25 0.
125 DIA 0.
225 0.
375 0.
260 0.
005 0.
170 0.
100 0.
800 • LOW NOISE • HIGH GAIN – 13 dB MINIMUM APPLICATIONS • VHF/UHF COMMUNICATIONS from DC to 500 MHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj Power Dissipation Drain – Source Breakdown Voltage Gate – Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature 29W 65V ±20V 2A –65 to 150°C 200°C Semelab plc.
Telephone (01455) 556565.
Telex: 341927.
Fax (01455) 552612.
Prelim.
6/98 D2007UK ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min.
BVDSS IDSS IGSS gfs GPS η Ciss Coss Crss Drain–Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Forward Transconductance* Common Source Power Gain Drain Efficiency Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS = 0 VDS = 28V VGS = 20V ID = 10mA VDS = 10V PO = 5W VDS = 28V f = 400 MHz VDS = 0 VDS = 28V VDS = 28V VGS = –5V f = 1MHz VGS = 0 VGS = 0 f = 1MHz f = 1MHz IDQ = 0.
2A ID = 10mA VGS = 0 VDS = 0 VDS = VGS ID = 0.
4A 1 0.
36 13 40 20:1 65 Typ.
Max.
Unit V 2 1 7 mA µA V S dB % — 20 11 1 pF pF pF VGS(th) Gate Threshold Voltage* VSWR Load Mismatch Tolerance * Pulse Test: Pulse Duration = 300 µs , Duty Cycle ≤ 2% HAZARDOUS MATERIAL WARNING The ceramic portion of the device between leads and met...


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