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D2210UK

Seme LAB
Part Number D2210UK
Manufacturer Seme LAB
Description METAL GATE RF SILICON FET
Published Mar 27, 2005
Detailed Description TetraFET D2210UK METAL GATE RF SILICON FET MECHANICAL DATA C N (typ) B 3 D (2 pls) 2 1 A F (2 pls) H J GOLD METALLIS...
Datasheet PDF File D2210UK PDF File

D2210UK
D2210UK

Overview
TetraFET D2210UK METAL GATE RF SILICON FET MECHANICAL DATA C N (typ) B 3 D (2 pls) 2 1 A F (2 pls) H J GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 12.
5V – 1GHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN M I E K G • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • SIMPLE BIAS CIRCUITS DP PIN 1 PIN 3 SOURCE GATE PIN 2 DRAIN DIM mm A 16.
51 B 6.
35 C 45° D 3.
30 E 18.
92 F 1.
52 G 2.
16 H 14.
22 I 1.
52 J 6.
35 K 0.
13 M 5.
08 N 1.
27 x 45° Tol.
0.
25 0.
13 5° 0.
13 0.
08 0.
13 0.
13 0.
08 0.
13 0.
13 0.
03 0.
51 0.
13 Inches 0.
650 0.
250 45° 0.
130 0.
745 0.
060 0.
085 0.
560 0.
060 0.
250 0.
005 0.
200 0.
050 x 45° Tol.
0.
010 0.
005 5° 0.
005 0.
003 0.
005 0.
005 0.
003 0.
005 0.
005 0.
001 0.
020 0.
005 • LOW NOISE • HIGH GAIN – 10 dB MINIMUM APPLICATIONS • VHF/UHF COMMUNICATIONS from DC to 1 GHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj Power Dissipation Drain – Source Breakdown Voltage Gate – Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature 70W 40V ±20V 16A –65 to 150°C 200°C Semelab plc.
Telephone +44(0)1455 556565.
Fax +44(0)1455 552612.
E-mail: sales@semelab.
co.
uk Website: http://www.
semelab.
co.
uk 12/00 D2210UK ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min.
BVDSS IDSS IGSS gfs GPS η Ciss Coss Crss Drain–Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Forward Transconductance* Common Source Power Gain Drain Efficiency Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS = 0 VDS = 12.
5V VGS = 20V ID = 10mA VDS = 10V PO = 20W VDS = 12.
5V f = 1GHz VDS = 0 VGS = –5V f = 1MHz f = 1MHz f = 1MHz VDS = 12.
5V VGS = 0 VDS = 12.
5V VGS = 0 IDQ = 1.
6A ID = 10mA VGS = 0 VDS = 0 VDS = VGS ID = 0.
8A 0.
5 1.
44 10 40 20:1 40 Typ.
Max.
Unit V 8 8 7 mA µA V S dB % — 96 80 8 pF pF pF VGS(th) Gate Threshold Voltage* VSWR Load Mismatch Tolerance * Pulse Test: Pulse Duration = 300 µs , ...


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