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2SD879


Part Number 2SD879
Manufacturer Sanyo Semicon Device
Title NPN Epitaxial Planar Silicon Transistor
Description Ordering number:EN550F NPN Epitaxial Planar Silicon Transistor 2SD879 1.5V, 3V Strobe Applications Features · In applications where two NiCd bat...
Features
· In applications where two NiCd batteries are used to provide 2.4V, two 2SD879s are used.
· The charge time is approximately 1 second faster than that of germanium transistors.
· Less power dissipation because of low Collector-toEmitter Voltage VCE(sat), permitting more flashes of light to be emitt...

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2SD870 : : SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD870 COLOR TV HORIZONTAL OUTPUT APPLICATIONS. FEATURES • High Voltage : V CBO=1500V • Low Saturation Voltage : v CE(sat) =5V (Max - (IC=4A, I B=0.8A) • High Speed ; tf=1.0ys (Max.) (I C p=4A, I B i (end)=0. 8A) • Built-in Damper Type. • Glass Passivated Collector-Base Junction. Unit in mm JZ250MAX . 0Z1.QUAX . rnr -(109 jzao-0.03 itrr MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range EQUIVALENT CIRCUIT SYMBOL v CBO VCEO VEBO IC Tj x stg RATING 1500 600 UNIT.

2SD870 : ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Low Collector Saturation Voltage- : VCE(sat)= 5.0V(Max.)@ IC= 4A ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for color TV horizontal output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 5 A IE Emitter Current- Continuous PC Collector Power Dissipation @ TC= 25℃ TJ Junction Temperature 5 A 50 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ is.

2SD870 : ·With TO-3 package ·Built-in damper diode ·High voltage ,high speed ·Low collector saturation voltage APPLICATIONS ·For color TV horizontal output applications PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC IE PT Tj Tstg PARAMETER Collector-base voltage Collector-collector voltage Emitter-base voltage Collector current Emitter current Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1500 600 5 5 -5 50 150 -65~150 UNIT V V V A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transi.

2SD871 : 2SD871 SILICON NPN TRIPLE DIFFUSED MESA TYPE COLOR TV HORIZONTAL OUTPUT APPLICATIONS. FEATURES • High Voltage : VCB0=1500V • Low Saturation Voltage : V CE(sat) =5v (Max.) (I C =5A, I B=1A) • High Speed ; t f =1.0us (Max.) (I cp =5A, lBl(end)=lA) • Euilt-in Damper Type. Unit in mm 025.OMAX. 021.0 MAX "+0.09 010-0.03 3 am 302±a8 • Glass Passivated Collector-Base Junction. MAXIMUM RATINGS (T*=25°cA CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range EQUIVALENT CIRCUIT BASE SYMBOL VCBO VCEO VEBO IE PC Lstg RATING 1500 600 50 15.

2SD871 : ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Low Collector Saturation Voltage- : VCE(sat)= 5.0V(Max.)@ IC= 5A ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for color TV horizontal output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 6 A IE Emitter Current- Continuous PC Collector Power Dissipation @ TC= 25℃ TJ Junction Temperature 6 A 50 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ 2S.

2SD871 : ·With TO-3 package ·Built-in damper diode ·High voltage ,high speed ·Low collector saturation voltage APPLICATIONS ·For color TV horizontal output applications PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC IE PT Tj Tstg PARAMETER Collector-base voltage Collector-collector voltage Emitter-base voltage Collector current Emitter current Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1500 600 5 6 -6 50 150 -65~150 UNIT V V V A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transi.

2SD873 : SILICON NPN TRIPLE DIFFUSED TYPE 2SD873 HIGH POWER AMPLIFIER APPLICATIONS HIGH POWER SWITCHING APPLICATIONS DC-DC CONVERTER APPLICATIONS. REGULATOR APPLICATIONS. FEATURES • High Power Dissipation High Collector Current • Low Saturation Voltage PC =150W (Tc=25°C) I C=16A VC E(sat)=O.AV(Typ.) (I C=8A) INDUSTRIAL APPLICATIONS Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage v CBO VcEO Emitter-Base Voltage Collector Current VEBO ic Base Current Collector Power Dissipation^,.,, v Junction Temperature IB ?C Tj Storage Temperature Range Tstg ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERISTIC SYMBOL Collector Cut-of.

2SD873 : ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V (Min) ·High Power Dissipation ·High Current Capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High power amplifier applications. ·High power switching applications. ·DC-DC converter applications. ·Regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 16 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 4 A 150 W 175 ℃ Tstg Storage Temperature R.

2SD874 : Transistor 2SD874, 2SD874A Silicon NPN epitaxial planer type For low-frequency power amplification Complementary to 2SB766 and 2SB766A Unit: mm s Features q q q 0.4max. 45° s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD874 2SD874A 2SD874 VCEO VEBO ICP IC PC* Tj Tstg VCBO Symbol (Ta=25˚C) Ratings 30 60 25 50 5 1.5 1 1 150 –55 ~ +150 Unit V 3 1.0–0.2 +0.1 0.4±0.08 0.5±0.08 1.5±0.1 3.0±0.15 2 1 4.0–0.20 0.4±0.04 emitter voltage 2SD874A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * V marking V A A W ˚C ˚C 1:Base 2:Collector 3:Emitter EIAJ:SC–62 Mini Power Type .

2SD874 : SMD Type Transistors Silicon NPN Epitaxial Planar Type 2SD874,2SD874A Features Large collector power dissipation PC. Low collector-emitter saturation voltage VCE(sat). Mini power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature 2SD874 2SD874A 2SD874 2SD874A Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 30 60 25 50 5 1 1.5 1 150 -55 to +150 Unit V V V V V A A W www.kexin.com.cn 1 SMD Ty.

2SD874-HF : SMD Type NPN Transistors 2SD874-HF Transistors ■ Features ● Low Collector-Emitter Saturation Voltage ● Large Collector Power Dissipation ● Mini Power Type Package ● Complimentary to 2SB766-HF ● Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish 1.70 0.1 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Thermal Resistance From Junction To Ambient Collector Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC RθJA PC TJ Tstg Rating 30 25 5 1 250 500 150 -55 to 150 Unit V A .

2SD874-Q : MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • Halogen free available upon request by adding suffix "-HF" • Power amplifier applications • Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 Maximum Ratings Symbol VCEO VCBO VEBO IC PC TJ TSTG Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Collector power dissipation Junction Temperature Storage Temperature Rating 25 30 5 1 500 -55 to +150 -55 to +150 Unit V .

2SD874-R : MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • Halogen free available upon request by adding suffix "-HF" • Power amplifier applications • Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 Maximum Ratings Symbol VCEO VCBO VEBO IC PC TJ TSTG Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Collector power dissipation Junction Temperature Storage Temperature Rating 25 30 5 1 500 -55 to +150 -55 to +150 Unit V .

2SD874-S : MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • Halogen free available upon request by adding suffix "-HF" • Power amplifier applications • Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 Maximum Ratings Symbol VCEO VCBO VEBO IC PC TJ TSTG Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Collector power dissipation Junction Temperature Storage Temperature Rating 25 30 5 1 500 -55 to +150 -55 to +150 Unit V .

2SD874A : The 2SD874A is available in SOT-89 Package FEATURES  Available in SOT-89 Package ORDERING INFORMATION Package Type Part Number SOT-89 2SD874A Note SPQ: 1,000pcs/Reel AiT provides all RoHS Compliant Products PIN DESCRIPTION 1. BASE 2. COLLECTOR 3. EMITTER REV1.0 - APR 2015 RELEASED - -1- AiT Components Inc. www.ait-components.com 2SD874A GENERAL PURPOSE TRANSISTORS TRANSISTOR ABSOLUTE MAXIMUM RATINGS VCEO, Collector-Emitter Voltage(IB=0) 32V VCBO, Collector-Base Voltage(IE=0) 40V VEBO, Emitter-Base Voltage(IC=0) 6V IC, Collector Current 1A PTOT, Total Device Dissipation(TA =25°C)NOTE1 1W TJM, Junction Temperature(Max) 150°C TSTG, Storage Temperature -55°C ~150°.

2SD874A : Transistor 2SB766, 2SB766A Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD874 and 2SD874A Unit: mm s Features q q 2.6±0.1 0.4max. s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB766 2SB766A 2SB766 VCEO VEBO ICP IC PC* Tj Tstg Symbol VCBO (Ta=25˚C) Ratings –30 –60 –25 –50 –5 –1.5 –1 1 150 –55 ~ +150 1cm2 Unit V 45° 1.0–0.2 +0.1 0.4±0.08 0.5±0.08 1.5±0.1 3.0±0.15 3 2 1 4.0–0.20 0.4±0.04 emitter voltage 2SB766A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * V V A A W ˚C ˚C 1:Base 2:Collector 3:Emitter EIAJ:SC–62 Mini P.

2SD874A : RoHS 2SD874A 2SD874A TRANSISTOR (NPN) DFEATURES Power dissipation TPCM: 500 mW (Tamb=25℃) .,LCollector current ICM: Collector-base voltage 1A OV(BR)CBO: 60 V Operating and storage junction temperature range CTJ, Tstg: -55℃ to +150℃ SOT-89 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 ICELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter NCollector-base breakdown voltage Collector-emitter breakdown voltage OEmitter-base breakdown voltage RCollector cut-off current TEmitter cut-off current CDC current gain ECollector-emitter saturation voltage LBase-emitter saturation voltage ETransition frequency JCollector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO I.




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