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2SJ181S

Hitachi Semiconductor
Part Number 2SJ181S
Manufacturer Hitachi Semiconductor
Description P-Channel MOSFET
Published Mar 30, 2005
Detailed Description 2SJ181(L), 2SJ181(S) Silicon P-Channel MOS FET Application High speed power switching Features • • • • • Low on-resist...
Datasheet PDF File 2SJ181S PDF File

2SJ181S
2SJ181S

Overview
2SJ181(L), 2SJ181(S) Silicon P-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline DPAK-1 4 4 1 1 D G 1.
Gate 2.
Drain 3.
Source 4.
Drain S 2 3 2 3 2SJ181(L), 2SJ181(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
Value at TC = 25°C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings –600 ±15 –0.
...


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