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2SJ317

Hitachi Semiconductor
Part Number 2SJ317
Manufacturer Hitachi Semiconductor
Description P-Channel MOSFET
Published Mar 30, 2005
Detailed Description 2SJ317 Silicon P-Channel MOS FET Application High speed power switching Low voltage operation Features • Very low on-r...
Datasheet PDF File 2SJ317 PDF File

2SJ317
2SJ317

Overview
2SJ317 Silicon P-Channel MOS FET Application High speed power switching Low voltage operation Features • Very low on-resistance • High speed switching • Suitable for camera or VTR motor drive circuit, power switch, solenoid drive and etc.
Outline UPAK 2 1 4 D 1.
Gate 2.
Drain 3.
Source 4.
Drain S 3 G 2SJ317 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings –12 –7 ±2 ±4 2 1 150 –55 to +150 Unit V V A A A W °C °C Notes: 1.
PW ≤ 100 µs, duty cycle ≤ 10...


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