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2SJ386

Hitachi Semiconductor
Part Number 2SJ386
Manufacturer Hitachi Semiconductor
Description P-Channel MOSFET
Published Mar 30, 2005
Detailed Description 2SJ386 Silicon P-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High spee...
Datasheet PDF File 2SJ386 PDF File

2SJ386
2SJ386

Overview
2SJ386 Silicon P-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC - DC converter Outline TO-92 Mod D G 32 1 1.
Source 2.
Drain 3.
Gate S 2SJ386 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: 1.
PW ≤ 10 µs, duty cycle ≤ 1 % Symbol VDSS VGSS ID I D(pulse)* I DR Pch Tch Tstg 1 Ratings –30 ±20 –3 –5 –3 0.
9 150 –55 to +150 Unit V V A A A ...


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