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2SJ409L

Hitachi Semiconductor
Part Number 2SJ409L
Manufacturer Hitachi Semiconductor
Description P-Channel MOSFET
Published Mar 30, 2005
Detailed Description 2SJ409(L), 2SJ409(S) Silicon P-Channel MOS FET Application High speed power switching Features • • • • • Low on-resist...
Datasheet PDF File 2SJ409L PDF File

2SJ409L
2SJ409L

Overview
2SJ409(L), 2SJ409(S) Silicon P-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 4 V Gate drive device can be driven from 5 V source Suitable for Switching regulator, DC - DC converter Outline LDPAK 4 4 1 2 1 D G 2 3 3 S 1.
Gate 2.
Drain 3.
Source 4.
Drain 2SJ409(L), 2SJ409(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
Value at Tc = 25°C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings –100 ±20 –20 –80 –20 75 150 –55 to +150 Unit V V A A A W °C °C 2 2SJ409(L), 2SJ409(S) Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol V(BR)DSS V(BR)GSS I GSS Min –100 ±20 — — –1.
0 — — Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 7.
5 — — — — — — — — — Typ — — — — — 0.
12 0.
16 12 1860 680 145 15 115 320 170 –1.
05 280 Max — — ±10 –250 –2.
0 0.
16 0.
22 — — — — — — — — — — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V ns I F = –20 A, VGS = 0 I F = –20 A, VGS = 0, diF/dt = 50 A/µs Test conditions I D = –10 mA, VGS = 0 I G = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = –80 V, VGS = 0 I D = –1 mA, VDS = –10 V I D = –10 A VGS = –10 V*1 I D = –10 A VGS = –4 V*1 I D = –10 A VDS = –10 V*1 VDS = –10 V VGS = 0 f = 1 MHz I D = –10 A VGS = –10 V RL = 3 Ω Zero gate voltage drain current I DSS Gate to source cutoff voltage Static drain to source on state resistance VGS(off) RDS(on) See characteristics curves of 2SJ221 3 Unit: mm 10.
2 ± 0.
3 (1.
4) ...


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