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2SJ620

Toshiba Semiconductor
Part Number 2SJ620
Manufacturer Toshiba Semiconductor
Description TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2--MOSV)
Published Mar 30, 2005
Detailed Description 2SJ620 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-π-MOSV) 2SJ620 Switching Regulator and DC-DC Conv...
Datasheet PDF File 2SJ620 PDF File

2SJ620
2SJ620

Overview
2SJ620 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-π-MOSV) 2SJ620 Switching Regulator and DC-DC Converter Applications Motor Drive Applications · · · · · 4-V gate drive Low drain-source ON resistance: RDS (ON) = 63 mΩ (typ.
) High forward transfer admittance: |Yfs| = 15 S (typ.
) Low leakage current: IDSS = −100 µA (max) (VDS = −100 V) Enhancement-model: Vth = −0.
8 to −2.
0 V (VDS = −10 V, ID = −1 mA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kW) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating -100 -100 ±20 -18 -72 125 937 -18 12.
5 150 -55 to150 Unit V V V ...


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