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2SK0301

Panasonic Semiconductor
Part Number 2SK0301
Manufacturer Panasonic Semiconductor
Description Silicon N-Channel Junction FET
Published Mar 30, 2005
Detailed Description Silicon Junction FETs (Small Signal) 2SK0301 (2SK301) Silicon N-Channel Junction FET For low-frequency amplification Fo...
Datasheet PDF File 2SK0301 PDF File

2SK0301
2SK0301

Overview
Silicon Junction FETs (Small Signal) 2SK0301 (2SK301) Silicon N-Channel Junction FET For low-frequency amplification For switching 5.
0±0.
2 5.
1±0.
2 4.
0±0.
2 unit: mm I Features 13.
5±0.
5 G Low noies, high gain G High gate to drain voltage VGDO 0.
45 –0.
1 +0.
2 0.
45 –0.
1 +0.
2 I Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source voltage Gate to Drain voltage Gate to Source voltage Drain current Gate current Allowable power dissipation Junction temperature Storage temperature Symbol VDSX VGDO VGSO ID IG PD Tj Tstg Ratings 55 −55 −55 ±30 10 250 125 −55 to +125 Unit V V V mA mA mW °C °C 1.
27 1.
27 1 2 3 2.
54±0.
15 I Electrical Characteristics (Ta = 25°C) Parameter Drain to Source cut-off current Gate to Source leakage current Gate to Drain voltage Gate to Source cut-off voltage Mutual conductance Symbol IDSS* IGSS VGDC VGSC gm Conditions VDS = 10V, VGS = 0 VGS = −30V, VDS = 0 IG = −100µA, VDS = 0 VDS = 10V, ID = 10µA VDS = 10V, VGS = 0, f = 1kHz VDS = 10V, VGS = 0, f = 1...


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