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2SK1626

Hitachi Semiconductor
Part Number 2SK1626
Manufacturer Hitachi Semiconductor
Description Silicon N-Channel MOSFET
Published Mar 30, 2005
Detailed Description 2SK1626, 2SK1627 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance...
Datasheet PDF File 2SK1626 PDF File

2SK1626
2SK1626

Overview
2SK1626, 2SK1627 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-220FM D G 1 2 3 1.
Gate 2.
Drain 3.
Source S 2SK1626, 2SK1627 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1626 2SK1627 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
Value at TC = 25°C VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Symbol VDSS Ratings 450 500 ±30 5 20 5 35 150 –55 to +150 Unit V V A A A W °C °C 2 2SK1626, 2SK1627 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Symbol 2SK1626 V(BR)DSS 2SK1627 V(BR)GSS I GSS Min 450 500 ±30 — — — — — — ±10 250 V µA µA I G = ±100 µA, VDS = 0 VGS = ±25 V, VDS = 0 VDS = 360 V, VGS = 0 VDS = 400 V, VGS = 0 VGS(off) 2.
0 — — |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 2.
5 — — — — — — — — — — 1.
0 1.
2 4.
0 640 160 20 10 25 50 30 0.
95 300 3.
0 1.
4 1.
5 — — — — — — — — — — S pF pF pF ns ns ns ns V ns I F = 5 A, VGS = 0 I F = 5 A, VGS = 0, diF/dt = 100 A/µs I D = 2.
5 A, VGS = 10 V, RL = 12 Ω I D = 2.
5 A, VDS = 10 V *1 VDS = 10 V, VGS = 0, f = 1 MHz V Ω I D = 1 mA, VDS = 10 V I D = 2.
5 A, VGS = 10 V *1 Typ — Max — Unit V Test conditions I D = 10 mA, VGS = 0 Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage 2SK1626 I DSS 2SK1627 Static Drain to source 2SK1626 RDS(on) on state resistance 2SK1627 Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note 1.
Pulse test See characteristic curves of 2SK1155, 2SK1156.
3 2SK16...


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