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2SK1828

Toshiba Semiconductor
Part Number 2SK1828
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Published Mar 30, 2005
Detailed Description TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1828 High Speed Switching Applications Analog Switch Appli...
Datasheet PDF File 2SK1828 PDF File

2SK1828
2SK1828

Overview
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1828 High Speed Switching Applications Analog Switch Applications • 2.
5 V gate drive • Low threshold voltage: Vth = 0.
5 to 1.
5 V • High speed • Enhancement-mode • Small package 2SK1828 Unit: mm Marking Equivalent Circuit Absolute Maximum Ratings (Ta = 25°C) JEDEC TO-236MOD JEITA SC-59 TOSHIBA 2-3F1F Weight: 0.
012 g (typ.
) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage DC drain current Drain power dissipation Channel temperature Storage temperature range VDS VGSS ID PD Tch Tstg 20 10 50 200 150 −55 to 150 V V mA mW °C °C Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Note: This transistor is electrostatic sensitive device.
Please handle with caution.
Start of commercial production 1991-02 1 2014-03-01 Electrical Characteristics (Ta = 25°C) 2SK1828 Characteristics Gate leakage current Drain-source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Drain-source ON resistance Input capacitance Reverse transfer capacitance Output capacitance Switching time Turn-on time Turn-off time Symbol Test Condition Min Typ.
Max Unit IGSS V (BR) DSS IDSS Vth ⎪Yfs⎪ RDS (ON) Ciss Crss Coss ton toff VGS = 10 V, VDS = 0 ID = 100 μA, VGS = 0 VDS = 20 V, VGS = 0 VDS = 3 V, ID = 0.
1 mA VDS = 3 V, ID = 10 mA ID = 10 mA, VGS = 2.
5 V VDS = 3 V, VGS = 0, f = 1 MHz VDS = 3 V, VGS = 0, ...


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