DatasheetsPDF.com

2SK1880L

Hitachi Semiconductor
Part Number 2SK1880L
Manufacturer Hitachi Semiconductor
Description Silicon N-Channel MOSFET
Published Mar 30, 2005
Detailed Description 2SK1880(L), 2SK1880(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • Low on-resist...
Datasheet PDF File 2SK1880L PDF File

2SK1880L
2SK1880L

Overview
2SK1880(L), 2SK1880(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • Low on-resistance High speed switching No secondary breakdown Suitable for Switching regulator Outline DPAK-1 4 4 1 1 D G 1.
Gate 2.
Drain 3.
Source 4.
Drain S 2 3 2 3 2SK1880(L), 2SK1880(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1.
PW ≤ 10 µs, duty cycle ≤ 1 % 2.
Value at Tc = 25 °C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings 600 ±30 1.
5 3.
0 1.
5 20 150 –55 to +150 Unit V V A A A W °C °C 2 2SK1880(L), 2SK1880(S) Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol V(BR)DSS V(BR)GSS I GSS Min 600 ±30 — — 2.
0 — 0.
85 — — — — — — — — — Typ — — — — — 6.
5 1.
4 250 55 8 10 25 35 30 0.
95 350 Max — — ±10 100 3.
0 8.
0 — — — — — — — — — — Unit V V µA µA V Ω S pF pF pF ns ns ns ns V µs I F = 1.
5 A, VGS = 0 I F = 1.
5 A, VGS = 0, diF / dt = 100 A / µs Test conditions I D = 10 mA, VGS = 0 I G = ±100 µA, VDS = 0 VGS = ±25 V, VDS = 0 VDS = 500 V, VGS = 0 I D = 1 mA, VDS = 10 V ID = 1 A VGS = 10 V*1 ID = 1 A VDS = 20 V*1 VDS = 10 V VGS = 0 f = 1 MHz ID = 1 A VGS = 10 V RL = 30 Ω Zero gate voltage drain current I DSS Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note 1.
Pulse Test VGS(off) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 3 2SK1880(L), 2SK1880(S) Power vs.
Temperature Derating 30 Channel Dissipation Pch (W) 10 Drain Current I D (A) 3 1 O a pe by rea rat R is ion DS lim in (o ite th n) d is 1...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)