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2SK1917-MR

Fuji Electric
Part Number 2SK1917-MR
Manufacturer Fuji Electric
Description N-CHANNEL SILICON POWER MOSFET
Published Mar 30, 2005
Detailed Description 2SK1917-MR N-CHANNEL SILICON POWER MOSFET FUJI POWER MOSFET F-II SERIES Features High speed switching Low on-resistanc...
Datasheet PDF File 2SK1917-MR PDF File

2SK1917-MR
2SK1917-MR

Overview
2SK1917-MR N-CHANNEL SILICON POWER MOSFET FUJI POWER MOSFET F-II SERIES Features High speed switching Low on-resistance No secondary breakdown Low driving power High voltage VGS=±30V Guarantee Applications Switching regulators UPS DC-DC converters General purpose power amplifier Outline Drawings TO-220F15 2.
54 JEDEC EIAJ 3.
Source SC-67 Maximum ratings and characteristics Absolute maximum ratings ( Tc=25°C unless otherwise specified) Item Symbol Rating Unit Drain-source voltage VDS 250 V Continuous drain current ID 10 A Pulsed drain current ID(puls] 28 A Continuous reverse drain current IDR 10 A Gate-source peak voltage VGS ±30 V Max.
power dissipation PD 50 W Operating and storage Tch +150 °C temperature range Tstg -55 to +150 °C Equivalent circuit schematic Gate(G) Drain(D) Source(S) Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton (ton=td(on)+tr) Turn-off time toff (toff=td(off)+tf) Diode forward on-voltage Reverse recovery time Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf VSD trr Test Conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=250V VGS=0V VGS=±30V VDS=0V ID=5A VGS=10V ID=5A VDS=25V VDS=25V VGS=0V f=1MHz VCC=150V RG=25 Ω ID=10A VGS=10V Tch=25°C Tch=125°C IF=2xIDR VGS=0V Tch=25°C IF=IDR di/dt=100A/µs Tch=25°C Min.
250 2.
5 2.
0 Typ.
3.
5 10 0.
2 10 0.
3 4.
5 570 140 70 20 40 100 50 1.
12 140 Max.
Units V 5.
0 V 500 µA 1.
0 mA 100 nA 0.
4 Ω S 860 pF 210 110 30 ns 60 150 75 1.
68 V ns Thermal characteristics Item Thermal resistance Symbol Rth(ch-a) Rth(ch-c) Test Conditions channel to ambient channel to case Min.
Typ.
Max.
62.
5 2.
5 Units °C/W °C/W 1 FUJI POWER MOSFET Characteristics Typi...


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