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2SK2098-01MR

Part Number	2SK2098-01MR
Manufacturer	Fuji Electric
Description	N-channel MOS-FET
Published	Mar 30, 2005
Detailed Description	2SK2098-01MR FAP-III Series > Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forw...
Datasheet	2SK2098-01MR PDF File

Overview

2SK2098-01MR FAP-III Series > Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanche Proof N-channel MOS-FET 150V 0,08Ω 20A 50W > Outline Drawing > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Drain-Gate-Voltage (RGS=20KΩ) Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Max.
Power Dissipation Operating and Storage Temperature Range Symbol V DS V DGR ID I D(puls) V GS PD T ch T stg Rating 150 150 20 80 ±20 50 150 -55 ~ +150 Unit V V A A V W °C °C > Equivalent Circuit - Electrical Characteristics (TC=25°C), unless otherwise specified Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Gate Source Leakage Current Drain Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time ton (ton=td(on)+tr) Turn-Off-Time toff (ton=td(off)+tf) Avalanche Capability Continous Reverse Drain Current Pulsed Reverse Drain Current Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge - Thermal Characteristics Item Thermal Resistance Symbol V (BR)DSS V GS(th) I DSS I R g C C C t t t t I I I V t Q GSS DS(on) fs iss oss rss d(on) r d(off) f AV DR DRM SD rr rr Test conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=150V Tch=25°C VGS=0V Tch=125°C VGS=±20V VDS=0V ID=10A VGS=4V ID=10A VGS=10V ID=10A VDS=25V VDS=25V VGS=0V f=1MHz VCC=30V ID=20A VGS=10V RGS=25Ω Tch=25°C L = 100µH Min.
150 1,0 Typ.
1,5 10 0,2 10 0,065 0,055 20 2300 330 150 15 20 450 100 Max.
2,5 500 1,0 100 0,1 0,08 3450 500 230 25 30 700 150 20 80 1,50 10 20 IF=2xIDR VGS=0V Tch=25°C IF=IDR VGS=0V -dIF/dt=100A/µs Tch=25°C 1,0 125 0,6 Unit V V µA mA nA Ω Ω S pF pF pF ns ns ns ns A A A V ns µC Symbol R th(ch-a) R th(ch-c) Test conditions channel to...

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2SK2098-01MR N-channel MOS-FET - Fuji Electric

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