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2SK2257-01 Datasheet PDF


Part Number 2SK2257-01
Manufacturer Fuji Electric
Title N-channel MOS-FET
Description 2SK2257-01 FAP-IIA Series Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guar...
Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof N-channel MOS-FET 500V 0,4Ω 17A 150W Outline Drawing Applications Switching Regulators UPS DC-DC converters General Purpose Power Amplifier Maximum Ratings ...

File Size 208.85KB
Datasheet 2SK2257-01 PDF File








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2SK2257-01 : ·Drain Current ID= 17A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·UPS ·DC-DC converters ·General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 500 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 17 A ID(puls) Pulsed Drain Current 68 A Ptot Total Dissipation@TC=25℃ 150 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range ·THERMAL CHARACTERISTICS SYMBOL PARAMETER -55~150 ℃ MAX UNIT Rth j-c Thermal Re.




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